2SD1128 PDF and Equivalents Search

 ..1. Size:65K  wingshing

 2sd1128.pdf

2SD1128 NPN SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-220 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 150 V Collector-Emitter Voltage VCEO 100 V Collector Current (DC) IC 5 A Collector Dissipation (Tc=25 PC 30 W Junction Temperature Tj 150... See More ⇒

 ..2. Size:187K  inchange semiconductor

 2sd1128.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1128 DESCRIPTION Excellent linearity in h FE High DC Current Gain High Reliability Excellent Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color & B/W TV power supply Active power filter Industrial use power supply (series regul... See More ⇒

 8.1. Size:282K  hitachi

 2sd1127.pdf

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 8.2. Size:33K  hitachi

 2sd1126.pdf

2SD1126(K) Silicon NPN Triple Diffused Application Power switching Outline TO-220AB 2 1 1. Base ID 2. Collector (Flange) 1 3. Emitter 1.5 k 130 2 3 (Typ) (Typ) 3 2SD1126(K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7V Collector current IC... See More ⇒

 8.3. Size:208K  inchange semiconductor

 2sd1127.pdf

isc Silicon NPN Darlington Power Transistor 2SD1127 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) High DC Current Gain h = 1000(Min) @I = 10A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 )... See More ⇒

 8.4. Size:193K  inchange semiconductor

 2sd1124.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1124 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) High DC Current Gain h = 1000(Min) @I = 1A FE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed swi... See More ⇒

 8.5. Size:209K  inchange semiconductor

 2sd1126.pdf

isc Silicon NPN Darlington Power Transistor 2SD1126 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 5A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒