2SD1134 Todos los transistores


2SD1134 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1134

Material: Si

Polaridad de transistor: NPN


Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 70 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C


Ganancia de corriente contínua (hfe): 60

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de transistor bipolar 2SD1134


2SD1134 Datasheet (PDF)

1.1. 2sd1133 2sd1134.pdf Size:32K _hitachi


2SD1133, 2SD1134 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858 Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25C) Ratings Item Symbol 2SD1133 2SD1134 Unit Collector to base voltage VCBO 70 70 V Collector to emitter voltage VCEO 50 60 V Emitter to base voltage VEBO 5

1.2. 2sd1134.pdf Size:43K _hitachi


To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

 1.3. 2sd1134.pdf Size:137K _inchange_semiconductor


INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1134 DESCRIPTION ·Collector Current: IC= 4A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 2A ·High Collector Power Dissipation ·Complement to Type 2SB858 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETE

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .


Back to Top





Recientemente añadidas las descripciónes de los transistores:

BJT: ZDT758 | ZDT705 | ZDT690 | FJP5027O | FJP5027R | UN511Z | UN511V | UN511T | UN511N | UN511M | UN511L | UN511H | UN511F | UN511E | UN511D | UN5119 | UN5118 | UN5117 | UN5116 | UN5115 |



Back to Top