2SD1146 Todos los transistores

 

2SD1146 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1146

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.9 W

Tensión colector-base (Vcb): 50 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 300

Empaquetado / Estuche: TO92

Búsqueda de reemplazo de transistor bipolar 2SD1146

 

2SD1146 Datasheet (PDF)

4.1. 2sd1140.pdf Size:158K _toshiba

2SD1146
2SD1146

2SD1140 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1140 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications • High DC current gain: hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C • Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Maximum Ratings (

4.2. 2sd1145.pdf Size:89K _sanyo

2SD1146
2SD1146

Ordering number:EN784E NPN Epitaxial Planar Silicon Transistor 2SD1145 High-Current Driver Applications Applications Package Dimensions · Relay drivers, hammer drivers, lamp drivers, strobe unit:mm DC-DC converters, motor drivers. 2006B [2SD1145] 6.0 Features 5.0 4.7 · Low saturation voltage. · Large current capacity and wide ASO. 0.5 0.6 0.5 0.5 1 : Emitter 2 : Collecto

 4.3. 2sd1149.pdf Size:39K _panasonic

2SD1146
2SD1146

Transistor 2SD1149 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 –0.3 +0.25 0.65± 0.15 1.5 –0.05 0.65± 0.15 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. 3 Mini type package, allowing downsizing of the equipment and automatic insertion throug

4.4. 2sd1149 e.pdf Size:43K _panasonic

2SD1146
2SD1146

Transistor 2SD1149 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 –0.3 +0.25 0.65± 0.15 1.5 –0.05 0.65± 0.15 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. 3 Mini type package, allowing downsizing of the equipment and automatic insertion throug

 4.5. 2sd1148.pdf Size:48K _wingshing

2SD1146

2SD1148 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SB863 ABSOLUTE MAXIMUM RATING (T =25℃ ℃) ℃ ℃ A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 140 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 10 A

4.6. 2sd1149.pdf Size:604K _kexin

2SD1146
2SD1146

SMD Type Transistors NPN Transistors 2SD1149 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=20mA 1 2 ● Collector Emitter Voltage VCEO=100V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Colle

4.7. 2sd1142.pdf Size:201K _inchange_semiconductor

2SD1146
2SD1146

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1142 DESCRIPTION ·High Breakdown Voltage- : V = 1500V (Min) CBO ·Collector-Emitter Saturation Voltage- : V = 4.0V(Max.)@ I = 2.5A CE(sat) C ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. AB

4.8. 2sd1148.pdf Size:219K _inchange_semiconductor

2SD1146
2SD1146

isc Silicon NPN Power Transistor 2SD1148 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 140V(Min) (BR)CEO ·Good Linearity of h FE ·Complement to Type 2SB863 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage applications

4.9. 2sd114.pdf Size:204K _inchange_semiconductor

2SD1146
2SD1146

isc Silicon NPN Power Transistor 2SD114 DESCRIPTION ·High DC Current Gain- : h = 25-100@I = 7.5A FE C ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYM

4.10. 2sd1141.pdf Size:209K _inchange_semiconductor

2SD1146
2SD1146

isc Silicon NPN Darlington Power Transistor 2SD1141 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : V = 300V(Min) CEO(SUS) ·High DC Current Gain : h = 500(Min)@I = 4A FE C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage switching, igniter applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL P

4.11. 2sd1143.pdf Size:202K _inchange_semiconductor

2SD1146
2SD1146

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1143 DESCRIPTION ·High Breakdown Voltage- : V = 1500V (Min) CBO ·Collector-Emitter Saturation Voltage- : V = 5.0V(Max.)@ I = 5A CE(sat) C ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSO

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top

 


2SD1146
  2SD1146
  2SD1146
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: YZ21D | Q3-2 | 3DD13005MD-O-Z-N-C | 3DD13005MD-O-HF-N-B | ST2310DHI | ST2310HI | LM4158D | HLD128D | 9015M-D | 9015M-C | 9015M-B | 9014M-D | 9014M-C | 9014M-B | 2T837E | 2T837D | 2T837G | 2T837V | 2T837B | SS8550-J | SS8550-H

 

 

 
Back to Top