All Transistors. 2SD1146 Datasheet

 

2SD1146 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1146

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 300

Noise Figure, dB: -

Package: TO92

2SD1146 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1146 Datasheet (PDF)

8.1. 2sd1140.pdf Size:158K _toshiba

2SD1146
2SD1146

2SD1140 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1140 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C BMaximum Ratings (

8.2. 2sd1145.pdf Size:89K _sanyo

2SD1146
2SD1146

Ordering number:EN784ENPN Epitaxial Planar Silicon Transistor2SD1145High-Current Driver ApplicationsApplications Package Dimensions Relay drivers, hammer drivers, lamp drivers, strobeunit:mmDC-DC converters, motor drivers.2006B[2SD1145]6.0Features 5.0 4.7 Low saturation voltage. Large current capacity and wide ASO.0.50.60.5 0.51 : Emitter2 : Collecto

 8.3. 2sd1149.pdf Size:39K _panasonic

2SD1146
2SD1146

Transistor2SD1149Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh foward current transfer ratio hFE. 1Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.3Mini type package, allowing downsizing of the equipment andautomatic insertion throug

8.4. 2sd1149 e.pdf Size:43K _panasonic

2SD1146
2SD1146

Transistor2SD1149Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh foward current transfer ratio hFE. 1Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.3Mini type package, allowing downsizing of the equipment andautomatic insertion throug

 8.5. 2sd1148.pdf Size:48K _wingshing

2SD1146

2SD1148 NPN PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SB863 ABSOLUTE MAXIMUM RATING (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 140 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 10 A

8.6. 2sd1149.pdf Size:604K _kexin

2SD1146
2SD1146

SMD Type TransistorsNPN Transistors2SD1149SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=20mA1 2 Collector Emitter Voltage VCEO=100V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Colle

8.7. 2sd1142.pdf Size:201K _inchange_semiconductor

2SD1146
2SD1146

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1142DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOCollector-Emitter Saturation Voltage-: V = 4.0V(Max.)@ I = 2.5ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.AB

8.8. 2sd1148.pdf Size:219K _inchange_semiconductor

2SD1146
2SD1146

isc Silicon NPN Power Transistor 2SD1148DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB863Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage applications

8.9. 2sd114.pdf Size:204K _inchange_semiconductor

2SD1146
2SD1146

isc Silicon NPN Power Transistor 2SD114DESCRIPTIONHigh DC Current Gain-: h = 25-100@I = 7.5AFE CExcellent Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as an output device in complementaryaudio amplifiers to 100-Watts music power per channel.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM

8.10. 2sd1141.pdf Size:209K _inchange_semiconductor

2SD1146
2SD1146

isc Silicon NPN Darlington Power Transistor 2SD1141DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)CEO(SUS)High DC Current Gain: h = 500(Min)@I = 4AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage switching, igniter applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

8.11. 2sd1143.pdf Size:202K _inchange_semiconductor

2SD1146
2SD1146

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1143DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOCollector-Emitter Saturation Voltage-: V = 5.0V(Max.)@ I = 5ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSO

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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