2SD1153 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1153
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.9 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 120 MHz
Ganancia de corriente contínua (hfe): 6000
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar 2SD1153
2SD1153 Datasheet (PDF)
2sd1153.pdf
Ordering number:828DPNP/NPN Epitaxial Planar Silicon Darlington Tranasistors2SB865/2SD1153Drivers ApplicationsApplications Package Dimensions Relay drivers, hammer drivers, lamp drivers, motorunit:mmdrivers.2006A[2SB865/2SD1153]Features High DC current gain (4000 or more). Large current capacity and wide ASO. Low saturation voltage.EIAJ : SC-51 B : Base
2sd1159.pdf
Ordering number:EN837ENPN Triple Diffused Planar Silicon Transistor2SD1159TV Horizontal Deflection Output,High-Current Switching ApplicationsFeatures Package Dimensions Capable of efficient drive with small internal loss dueunit:mmto excellent tf.2010C[2SD1159]10.24.53.65.11.31.21 : Base0.80.42 : Collector1 2 33 : EmitterJEDEC : TO-220AB2.55 2.
2sd1157.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
2sd1157.pdf
isc Silicon NPN Power Transistor 2SD1157DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain-: h = 250V(Min.) @I = 0.5AFE CLow Collector Saturation VoltageHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC converterSolid sate relay
2sd1159.pdf
isc Silicon NPN Power Transistor 2SD1159DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output, high-currentswitching applications.ABSOLUTE
2sd1158.pdf
isc Silicon NPN Power Transistor 2SD1158DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain-: h = 250V(Min.) @I = 1AFE CLow Collector Saturation VoltageHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operatiAPPLICATIONSSwitching regulatorsDC-DC converterSolid sate relay
2sd1154.pdf
isc Silicon NPN Power Transistor 2SD1154DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V (Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output for B/W TV set.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2G103
History: 2G103
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050