All Transistors. 2SD1153 Datasheet

 

2SD1153 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1153

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 120 MHz

Forward Current Transfer Ratio (hFE), MIN: 6000

Noise Figure, dB: -

Package: TO92

2SD1153 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1153 Datasheet (PDF)

1.1. 2sd1153.pdf Size:83K _sanyo

2SD1153
2SD1153

Ordering number:828D PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors 2SB865/2SD1153 Drivers Applications Applications Package Dimensions Relay drivers, hammer drivers, lamp drivers, motor unit:mm drivers. 2006A [2SB865/2SD1153] Features High DC current gain (4000 or more). Large current capacity and wide ASO. Low saturation voltage. EIAJ : SC-51 B : Base ( ) : 2

4.1. 2sd1159.pdf Size:77K _sanyo

2SD1153
2SD1153

Ordering number:EN837E NPN Triple Diffused Planar Silicon Transistor 2SD1159 TV Horizontal Deflection Output, High-Current Switching Applications Features Package Dimensions Capable of efficient drive with small internal loss due unit:mm to excellent tf. 2010C [2SD1159] 10.2 4.5 3.6 5.1 1.3 1.2 1 : Base 0.8 0.4 2 : Collector 1 2 3 3 : Emitter JEDEC : TO-220AB 2.55 2.55

4.2. 2sd1157.pdf Size:97K _fuji

2SD1153
2SD1153

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

 4.3. 2sd1158.pdf Size:126K _fuji

2SD1153
2SD1153

4.4. 2sd1159.pdf Size:111K _inchange_semiconductor

2SD1153
2SD1153

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1159 DESCRIPTION ·With TO-220 package APPLICATIONS ·TV horizontal deflection output, ·High-current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-

 4.5. 2sd1157.pdf Size:235K _inchange_semiconductor

2SD1153
2SD1153

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1157 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High DC Current Gain- : hFE= 250V(Min.) @IC= 0.5A ·Low Collector Saturation Voltage ·High Reliability APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid sate relay ·General purpose power amplifi

4.6. 2sd1154.pdf Size:104K _inchange_semiconductor

2SD1153
2SD1153

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1154 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for horizontal deflection output for B/W TV set. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emi

4.7. 2sd1158.pdf Size:116K _inchange_semiconductor

2SD1153
2SD1153

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1158 DESCRIPTION ·With TO-220 package ·High speed switching ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Switching regulators ·DC-DC converters ·Solid state relay ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mou

Datasheet: 2SC4323 , 2SC4324 , 2SC4325 , 2SC4326 , 2SC4327 , 2SC4328 , 2SC4329 , 2SC433 , BC237 , 2SC4331 , 2SC4332 , 2SC4333 , 2SC4334 , 2SC4335 , 2SC4336 , 2SC4337 , 2SC4338 .

 
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