2SD1171. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SD1171 datasheet

..1. Size:198K inchange semiconductor
2sd1171.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1171 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Collector-Emitter Saturation Voltage- V = 4.0V(Max.)@ I = 2.0A CE(sat) C Built-in Damper Diode Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal defl

8.1. Size:69K wingshing
2sd1175.pdf pdf_icon

NPN TRIPLE DIFFUSED 2SD1175 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS (Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) TO-3 High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Coll

8.2. Size:196K inchange semiconductor
2sd1170.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1170 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min.) (BR)CEO Low Collector Saturation Voltage High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Driver for solenoid,motor and general purpose applic

8.3. Size:198K inchange semiconductor
2sd1175.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1175 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Collector-Emitter Saturation Voltage- V = 6.0V(Max.)@ I = 5.0A CE(sat) C Built-in Damper Diode Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal defl