All Transistors. 2SD1171 Datasheet

 

2SD1171 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1171

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 175 °C

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO3

2SD1171 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1171 Datasheet (PDF)

4.1. 2sd1175.pdf Size:69K _wingshing

2SD1171

NPN TRIPLE DIFFUSED 2SD1175 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS (Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) TO-3 High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Curre

4.2. 2sd1175.pdf Size:116K _inchange_semiconductor

2SD1171
2SD1171

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1175 DESCRIPTION Ў¤ With TO-3 package Ў¤ Built-in damper diode Ў¤ High voltage ,high power dissipation Ў¤ Wide area of safe operation APPLICATIONS Ў¤ Line-operated horizontal deflection output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter DESCRIPTION Absolute maximum ratings(Ta=Ўж )

 4.3. 2sd1170.pdf Size:229K _inchange_semiconductor

2SD1171
2SD1171

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1170 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain- : hFE= 2000( Min.) @(IC= 3A, VCE= 2V) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ (IC= 3A, IBB= 3mA) APPLICATIONS ·Driver for solenoid,motor and general purpose appli

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top