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2SD1175 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1175

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 1500 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 80

Empaquetado / Estuche: TO3

Búsqueda de reemplazo de transistor bipolar 2SD1175

 

2SD1175 Datasheet (PDF)

1.1. 2sd1175.pdf Size:69K _wingshing

2SD1175

NPN TRIPLE DIFFUSED 2SD1175 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS (Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) TO-3 High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Curre

1.2. 2sd1175.pdf Size:116K _inchange_semiconductor

2SD1175
2SD1175

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1175 DESCRIPTION Ў¤ With TO-3 package Ў¤ Built-in damper diode Ў¤ High voltage ,high power dissipation Ў¤ Wide area of safe operation APPLICATIONS Ў¤ Line-operated horizontal deflection output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter DESCRIPTION Absolute maximum ratings(Ta=Ўж )

 4.1. 2sd1170.pdf Size:229K _inchange_semiconductor

2SD1175
2SD1175

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1170 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain- : hFE= 2000( Min.) @(IC= 3A, VCE= 2V) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ (IC= 3A, IBB= 3mA) APPLICATIONS ·Driver for solenoid,motor and general purpose appli

Otros transistores... 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .

 

 
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Recientemente añadidas las descripciónes de los transistores:

BJT: UN511Z | UN511V | UN511T | UN511N | UN511M | UN511L | UN511H | UN511F | UN511E | UN511D | UN5119 | UN5118 | UN5117 | UN5116 | UN5115 | UN5114 | UN5113 | UN5112 | UN5111 | UN5110 |

 

 

 
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