2SD1175 datasheet, аналоги, основные параметры

Наименование производителя: 2SD1175

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 100 W

Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V

Макcимальный постоянный ток коллектора (Ic): 5 A

Предельная температура PN-перехода (Tj): 175 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 80

Корпус транзистора: TO3

 Аналоги (замена) для 2SD1175

- подборⓘ биполярного транзистора по параметрам

 

2SD1175 даташит

 ..1. Size:69K  wingshing
 2sd1175.pdf pdf_icon

2SD1175

NPN TRIPLE DIFFUSED 2SD1175 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS (Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) TO-3 High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Coll

 ..2. Size:198K  inchange semiconductor
 2sd1175.pdf pdf_icon

2SD1175

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1175 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Collector-Emitter Saturation Voltage- V = 6.0V(Max.)@ I = 5.0A CE(sat) C Built-in Damper Diode Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal defl

 8.1. Size:196K  inchange semiconductor
 2sd1170.pdf pdf_icon

2SD1175

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1170 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min.) (BR)CEO Low Collector Saturation Voltage High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Driver for solenoid,motor and general purpose applic

 8.2. Size:234K  inchange semiconductor
 2sd1172.pdf pdf_icon

2SD1175

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1172 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Collector-Emitter Saturation Voltage- V = 4.0V(Max.)@ I = 2.5A CE(sat) C Built-in Damper Diode Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal defl

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: 2SD1168, 2SD1169, 2SD117, 2SD1170, 2SD1171, 2SD1172, 2SD1173, 2SD1174, BD139, 2SD1176, 2SD1176A, 2SD1177, 2SD1177B, 2SD1177C, 2SD1178, 2SD1179, 2SD118