2SD1177B Todos los transistores

 

2SD1177B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD1177B
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 230 MHz
   Capacitancia de salida (Cc): 50 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: TO126
 

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2SD1177B Datasheet (PDF)

 8.1. Size:69K  wingshing
 2sd1175.pdf pdf_icon

2SD1177B

NPN TRIPLE DIFFUSED2SD1175 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS (Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) TO-3 High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Coll

 8.2. Size:196K  inchange semiconductor
 2sd1170.pdf pdf_icon

2SD1177B

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1170DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min.)(BR)CEOLow Collector Saturation VoltageHigh DC Current Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDriver for solenoid,motor and general purpose applic

 8.3. Size:198K  inchange semiconductor
 2sd1175.pdf pdf_icon

2SD1177B

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1175DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOCollector-Emitter Saturation Voltage-: V = 6.0V(Max.)@ I = 5.0ACE(sat) CBuilt-in Damper DiodeWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal defl

 8.4. Size:234K  inchange semiconductor
 2sd1172.pdf pdf_icon

2SD1177B

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1172DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOCollector-Emitter Saturation Voltage-: V = 4.0V(Max.)@ I = 2.5ACE(sat) CBuilt-in Damper DiodeWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal defl

MOSTRAR MÁS

Otros transistores... 2SD1171 , 2SD1172 , 2SD1173 , 2SD1174 , 2SD1175 , 2SD1176 , 2SD1176A , 2SD1177 , 2N5401 , 2SD1177C , 2SD1178 , 2SD1179 , 2SD118 , 2SD1180 , 2SD1181 , 2SD1182 , 2SD1183 .

History: 2SA813S3 | 2SC3661

 

 
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