2SD1177B Datasheet. Specs and Replacement

Type Designator: 2SD1177B

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 230 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO126

 2SD1177B Substitution

- BJT ⓘ Cross-Reference Search

 

2SD1177B datasheet

 8.1. Size:69K  wingshing

 2sd1175.pdf pdf_icon

2SD1177B

NPN TRIPLE DIFFUSED 2SD1175 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS (Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) TO-3 High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Coll... See More ⇒

 8.2. Size:196K  inchange semiconductor

 2sd1170.pdf pdf_icon

2SD1177B

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1170 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min.) (BR)CEO Low Collector Saturation Voltage High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Driver for solenoid,motor and general purpose applic... See More ⇒

 8.3. Size:198K  inchange semiconductor

 2sd1175.pdf pdf_icon

2SD1177B

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1175 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Collector-Emitter Saturation Voltage- V = 6.0V(Max.)@ I = 5.0A CE(sat) C Built-in Damper Diode Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal defl... See More ⇒

 8.4. Size:234K  inchange semiconductor

 2sd1172.pdf pdf_icon

2SD1177B

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1172 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Collector-Emitter Saturation Voltage- V = 4.0V(Max.)@ I = 2.5A CE(sat) C Built-in Damper Diode Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal defl... See More ⇒

SHOW MORE

Detailed specifications: 2SD1171, 2SD1172, 2SD1173, 2SD1174, 2SD1175, 2SD1176, 2SD1176A, 2SD1177, C945, 2SD1177C, 2SD1178, 2SD1179, 2SD118, 2SD1180, 2SD1181, 2SD1182, 2SD1183

Keywords - 2SD1177B pdf specs

 2SD1177B cross reference

 2SD1177B equivalent finder

 2SD1177B pdf lookup

 2SD1177B substitution

 2SD1177B replacement