2SD1181
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1181
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10
W
Tensión colector-base (Vcb): 180
V
Corriente del colector DC máxima (Ic): 1.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta:
TO220
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2SD1181
Datasheet (PDF)
8.5. Size:202K inchange semiconductor
2sd1186.pdf 
isc Silicon NPN Power Transistor 2SD1186DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitte
8.6. Size:183K inchange semiconductor
2sd1180.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1180DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 110V (Min)(BR)CEOLow collector saturation voltageWith TO-126 packageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio and radio frequency power amplifiersapplications.ABSOL
8.7. Size:198K inchange semiconductor
2sd1184.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1184DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh ReliabilityWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
8.8. Size:199K inchange semiconductor
2sd1187.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1187DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFECollector-Emitter Saturation Voltage-: V = 0.5V(Max.)@ I = 6.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applicationsDC-DC
8.9. Size:202K inchange semiconductor
2sd1185.pdf
isc Silicon NPN Power Transistor 2SD1185DESCRIPTIONHigh Breakdown Voltage-: V = 1200V (Min)CBOHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1200 VCBOV Collector-Emitte
8.10. Size:198K inchange semiconductor
2sd1183.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1183DESCRIPTIONHigh Breakdown Voltage-: V = 1200V (Min)CBOHigh ReliabilityWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
Otros transistores... 2SD1176A
, 2SD1177
, 2SD1177B
, 2SD1177C
, 2SD1178
, 2SD1179
, 2SD118
, 2SD1180
, 13007
, 2SD1182
, 2SD1183
, 2SD1184
, 2SD1185
, 2SD1186
, 2SD1187
, 2SD1187O
, 2SD1187Y
.
History: 2N1564
