Биполярный транзистор 2SD1181 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD1181
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 10 W
Макcимально допустимое напряжение коллектор-база (Ucb): 180 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: TO220
2SD1181 Datasheet (PDF)
2sd1186.pdf
isc Silicon NPN Power Transistor 2SD1186DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitte
2sd1180.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1180DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 110V (Min)(BR)CEOLow collector saturation voltageWith TO-126 packageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio and radio frequency power amplifiersapplications.ABSOL
2sd1184.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1184DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh ReliabilityWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
2sd1187.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1187DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFECollector-Emitter Saturation Voltage-: V = 0.5V(Max.)@ I = 6.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applicationsDC-DC
2sd1185.pdf
isc Silicon NPN Power Transistor 2SD1185DESCRIPTIONHigh Breakdown Voltage-: V = 1200V (Min)CBOHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1200 VCBOV Collector-Emitte
2sd1183.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1183DESCRIPTIONHigh Breakdown Voltage-: V = 1200V (Min)CBOHigh ReliabilityWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050