2SD1187O Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1187O
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80
W
Tensión colector-base (Vcb): 100
V
Tensión colector-emisor (Vce): 80
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 10
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10
MHz
Capacitancia de salida (Cc): 350
pF
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta:
TO247
Búsqueda de reemplazo de 2SD1187O
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2SD1187O datasheet
7.2. Size:199K inchange semiconductor
2sd1187.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1187 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Collector-Emitter Saturation Voltage- V = 0.5V(Max.)@ I = 6.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications DC-DC
8.4. Size:202K inchange semiconductor
2sd1186.pdf
isc Silicon NPN Power Transistor 2SD1186 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Collector-Emitte
8.5. Size:183K inchange semiconductor
2sd1180.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1180 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 110V (Min) (BR)CEO Low collector saturation voltage With TO-126 package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio and radio frequency power amplifiers applications. ABSOL
8.6. Size:198K inchange semiconductor
2sd1184.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1184 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Reliability Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
8.7. Size:202K inchange semiconductor
2sd1185.pdf
isc Silicon NPN Power Transistor 2SD1185 DESCRIPTION High Breakdown Voltage- V = 1200V (Min) CBO High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1200 V CBO V Collector-Emitte
8.8. Size:198K inchange semiconductor
2sd1183.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1183 DESCRIPTION High Breakdown Voltage- V = 1200V (Min) CBO High Reliability Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
Otros transistores... 2SD1180
, 2SD1181
, 2SD1182
, 2SD1183
, 2SD1184
, 2SD1185
, 2SD1186
, 2SD1187
, BD140
, 2SD1187Y
, 2SD1188
, 2SD1189
, 2SD119
, 2SD1190
, 2SD1191
, 2SD1192
, 2SD1193
.
History: 2SC3205
