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2SD1187O . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1187O

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 80 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 10 MHz

Capacitancia de salida (Cc): 350 pF

Ganancia de corriente contínua (hfe): 70

Empaquetado / Estuche: TO247

Búsqueda de reemplazo de transistor bipolar 2SD1187O

 

2SD1187O Datasheet (PDF)

3.1. 2sd1187.pdf Size:227K _toshiba

2SD1187O
2SD1187O



3.2. 2sd1187.pdf Size:240K _inchange_semiconductor

2SD1187O
2SD1187O

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1187 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.) @ IC= 6A ·High Power Dissipation APPLICATIONS ·High power switching applications ·DC-DC converter and DC-AC inverter applications ABSOLUTE MAXIMUM RATIN

 4.1. 2sd1189.pdf Size:135K _rohm

2SD1187O

4.2. 2sd1185.pdf Size:56K _no

2SD1187O

 4.3. 2sd1186.pdf Size:114K _inchange_semiconductor

2SD1187O
2SD1187O

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1186 DESCRIPTION Ў¤ With TO-3 package Ў¤ High breakdown voltage Ў¤ High speed switching APPLICATIONS Ў¤ Power switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO

4.4. 2sd1180.pdf Size:114K _inchange_semiconductor

2SD1187O
2SD1187O

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1180 DESCRIPTION Ў¤ With TO-126 package Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ Designed for use in audio and radio frequency power amplifiers PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC IC

 4.5. 2sd1185.pdf Size:114K _inchange_semiconductor

2SD1187O
2SD1187O

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1185 DESCRIPTION Ў¤ With TO-3 package Ў¤ High breakdown voltage Ў¤ High speed switching APPLICATIONS Ў¤ Power switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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