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2SD1207S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1207S

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 150 MHz

Capacitancia de salida (Cc): 12 pF

Ganancia de corriente contínua (hfe): 140

Empaquetado / Estuche: TO92

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2SD1207S Datasheet (PDF)

3.1. 2sd1207.pdf Size:51K _sanyo

2SD1207S
2SD1207S

Ordering number : EN930D 2SB892 / 2SD1207 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB892 / 2SD1207 Large-Current Switching Applications Applications • Power supplies, relay drivers, lamp drivers, and automotive wiring. Features • FBET and MBIT processed (Original process of SANYO). • Low saturation voltage. • Large current capacity and

4.1. 2sd1200.pdf Size:42K _rohm

2SD1207S

2SB1189 / 2SB1238 / 2SB899F Transistors Transistors 2SD1767 / 2SD1859 / 2SD1200F (96-618-B13) (96-750-D13) 278

4.2. 2sd1205.pdf Size:51K _panasonic

2SD1207S
2SD1207S

Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification 6.9± 0.1 2.5± 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer: hFE = 4000 to 2000. A shunt resistor is omitted from the driver. 0.85 M type package all

 4.3. 2sd1205 e.pdf Size:56K _panasonic

2SD1207S
2SD1207S

Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification 6.9± 0.1 2.5± 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer: hFE = 4000 to 2000. A shunt resistor is omitted from the driver. 0.85 M type package all

4.4. 2sd1209.pdf Size:31K _hitachi

2SD1207S
2SD1207S

2SD1209(K) Silicon NPN Epitaxial, Darlington Application • Low frequency power amplifier • Complementary pair with 2SA1193(K) Outline TO-92MOD 2 3 1. Emitter 2. Collector 3. Base 1 3 2 1 2SD1209(K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7V Co

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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