2SD1210 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1210
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 150 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 5000
Paquete / Cubierta: TO126
Búsqueda de reemplazo de transistor bipolar 2SD1210
2SD1210 Datasheet (PDF)
2sd1210.pdf
isc Silicon NPN Darlington Power Transistor 2SD1210DESCRIPTIONHigh DC Current Gain: h = 1000(Min.)@ I = 10AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed high current switching industrial use.ABS
2sd1212.pdf
Ordering number:990CPNP/NPN Epitaxial Planar Silicon Transistors2SB903/2SD121230V/12A High-Speed Switching ApplicationsApplications Package Dimensions Suitable for relay drivers, high-speed inverters,unit:mmconverters, and other general large-current switching2010Capplications.[2SB903/2SD1212]Features Low collector-to-emitter saturation voltage : VCE(sat)=()0.
2sd1213.pdf
Ordering number:1022APNP/NPN Epitaxial Planar Silicon Transistors2SB904/2SD121330V/12A High-Speed Switching ApplicationsApplications Package Dimensions Large current switching of relay drivers, high-speedunit:mminverters, converters.2022A[2SB904/2SD1213]Features Low collector-to-emitter saturation voltage : VCE(sat)=0.5V (PNP), 0.4V (NPN) max. Large current
2sd1211.pdf
Transistor2SD1211Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SB9875.9 0.2 4.9 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver-stage of a low-frequency and 40 to 60Woutput amplifier.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage V
2sd1211 e.pdf
Transistor2SD1211Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SB9875.9 0.2 4.9 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver-stage of a low-frequency and 40 to 60Woutput amplifier.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage V
2sd1213.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1213 DESCRIPTION With TO-3PN package Low collector-to-emitter saturation voltage : VCE(sat)= 0.4V(max.) Large current capacity. Complement to type 2SB904 APPLICATIONS Large current switching of relay drivers, high-speed inverters, converters. PINNING PIN DESCRIPTION1 Base Collector;connect
2sd1212.pdf
isc Silicon NPN Power Transistor 2SD1212DESCRIPTIONHigh Collector Current:: I = 12ACLow Collector Saturation Voltage: V = 0.4V(Max)@I = 5ACE(sat) CComplement to Type 2SB903Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters, converters,and other general large-current switc
2sd1213.pdf
isc Silicon NPN Power Transistor 2SD1213DESCRIPTIONHigh Collector Current:: I = 20ACLow Collector Saturation Voltage: V = 0.4V(Max)@I = 8ACE(sat) CComplement to Type 2SB904Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for large current switching of relay drivers,high-speed inverters,converters applications
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
