2SD1210 datasheet и подбор замены

 ..1. Size:41K  no
 2sd1210.pdf 

 ..2. Size:214K  inchange semiconductor
 2sd1210.pdf 

isc Silicon NPN Darlington Power Transistor 2SD1210 DESCRIPTION High DC Current Gain h = 1000(Min.)@ I = 10A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed high current switching industrial use. ABS

 8.1. Size:120K  sanyo
 2sd1212.pdf 

Ordering number 990C PNP/NPN Epitaxial Planar Silicon Transistors 2SB903/2SD1212 30V/12A High-Speed Switching Applications Applications Package Dimensions Suitable for relay drivers, high-speed inverters, unit mm converters, and other general large-current switching 2010C applications. [2SB903/2SD1212] Features Low collector-to-emitter saturation voltage VCE(sat)=( )0.

 8.2. Size:116K  sanyo
 2sd1213.pdf 

Ordering number 1022A PNP/NPN Epitaxial Planar Silicon Transistors 2SB904/2SD1213 30V/12A High-Speed Switching Applications Applications Package Dimensions Large current switching of relay drivers, high-speed unit mm inverters, converters. 2022A [2SB904/2SD1213] Features Low collector-to-emitter saturation voltage VCE(sat)= 0.5V (PNP), 0.4V (NPN) max. Large current

 8.3. Size:49K  panasonic
 2sd1218.pdf 

 8.4. Size:37K  panasonic
 2sd1211.pdf 

Transistor 2SD1211 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SB987 5.9 0.2 4.9 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage V

 8.5. Size:41K  panasonic
 2sd1211 e.pdf 

Transistor 2SD1211 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SB987 5.9 0.2 4.9 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage V

 8.6. Size:48K  no
 2sd1217.pdf 

 8.7. Size:87K  jmnic
 2sd1213.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1213 DESCRIPTION With TO-3PN package Low collector-to-emitter saturation voltage VCE(sat)= 0.4V(max.) Large current capacity. Complement to type 2SB904 APPLICATIONS Large current switching of relay drivers, high-speed inverters, converters. PINNING PIN DESCRIPTION 1 Base Collector;connect

 8.8. Size:213K  inchange semiconductor
 2sd1212.pdf 

isc Silicon NPN Power Transistor 2SD1212 DESCRIPTION High Collector Current I = 12A C Low Collector Saturation Voltage V = 0.4V(Max)@I = 5A CE(sat) C Complement to Type 2SB903 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters, converters, and other general large-current switc

 8.9. Size:218K  inchange semiconductor
 2sd1213.pdf 

isc Silicon NPN Power Transistor 2SD1213 DESCRIPTION High Collector Current I = 20A C Low Collector Saturation Voltage V = 0.4V(Max)@I = 8A CE(sat) C Complement to Type 2SB904 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for large current switching of relay drivers, high-speed inverters,converters applications