2SD1233 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon NPN Darlington Power Transistor 2SD1233 DESCRIPTION High DC Current Gain h = 1500(Min.)@ I = 4A, V = 3V FE C CE Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control

Ordering number 1034B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB913/2SD1230 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2022A [2SB913/2SD1230] Features High DC current gain. High current capacity and wide ASO. Low saturation voltage. 1 Base 2 Colle

Ordering number 1046B PNP/NPN Epitaxial Planar Silicon Transistors 2SB919/2SD1235 30V/8A High-Speed Switching Applications Applications Package Dimensions Large current switching of relay drivers, high-speed unit mm inverters, converters. 2010C [2SB919/2SD1235] Features Low collector-to-emitter saturation voltage VCE(sat)= 0.5V (PNP), 0.4V (NPN) max. Large current

Ordering number 1798A PNP/NPN Epitaxial Planar Silicon Transistors 2SB922L/2SD1238L 80V/12A Switching Applications Applications Package Dimensions Suittable for relay drivers, high-speed inverters, unit mm converters, and other large-current switching appli- 2022A cations. [2SB922L/2SD1238L] Features Low collector-to-emitter saturation voltage VCE(sat)= 0.5V (PNP), 0.4

Ordering number 1797B PNP/NPN Epitaxial Planar Silicon Transistors 2SB921L/2SD1237L 80V/7A Switching Applications Applications Package Dimensions Suitable for relay drivers, high-speed inverters, unit mm converters, and other genral large current switching 2010C applications. [2SB921L/2SD1237L] Features Low collector-to-emitter saturation voltage VCE(sat)= 0.5V (PNP),

Ordering number 1796B PNP/NPN Epitaxial Planar Silicon Transistors 2SB920L/2SD1236L 80V/5A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2010C [2SB920L/2SD1236L] Features Low-saturation collector-to-emitter voltage VCE(sat)= 0.5V (PNP), 0.4V (NPN) max

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD1237 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 4A CE(sat) C Large Current Capacity Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters,converters, and other general high-current switching applications.

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD1236 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 3A CE(sat) C Large Current Capacity 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters,converters, and other general high-curren

isc Silicon NPN Darlington Power Transistor 2SD1230 DESCRIPTION High DC Current Gain h = 1500(Min.)@ I = 4A, V = 3V FE C CE Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO Complement to Type 2SB913 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, printer hammer drivers, relay driver

isc Product Specification isc Silicon NPN Power Transistor 2SD1239 DESCRIPTION High Current Capability Excellent Safe Operating Area Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Power amplifiers . Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VALUE

isc Silicon NPN Power Transistors 2SD1235 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 3A CE(sat) C Large Current Capacity Complement to Type 2SB919 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Large current switching of relay drivers, high-speed inverters,converters. ABSOLUTE MAXIMUM RATINGS(T =25 )

isc Silicon NPN Power Transistors 2SD1238L DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 6A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB922L Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers , high-speed inverters, converters,and other general high-current switching

isc Silicon NPN Power Transistors 2SD1238 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 6A CE(sat) C Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers , high-speed inverters, converters,and other general high-current switching applications ABSOLUTE MAXIMUM

isc Silicon NPN Power Transistors 2SD1237L DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 4A CE(sat) C Large Current Capacity Complement to Type 2SB921L Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters,converters, and other general high-current switching applic

isc Silicon NPN Power Transistors 2SD1236L DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 3A CE(sat) C Large Current Capacity Complement to Type 2SB920L Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters,converters, and other general high-current switching applic