2SD1247U Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1247U
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 2.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 150 MHz
Capacitancia de salida (Cc): 19 pF
Ganancia de corriente contínua (hFE): 280
Encapsulados: TO92
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2SD1247U datasheet
7.2. Size:88K sanyo
2sd1247.pdf 
Ordering number 1029C PNP/NPN Epitaxial Planar Silicon Transistors 2SB927/2SD1247 Large-Current Driving Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers, electrical unit mm equipment. 2006A [2SB927/2SD1247] Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO. ( ) 2SB927 EIA
8.2. Size:85K sanyo
2sd1246.pdf
Ordering number 1030E PNP/NPN Epitaxial Planar Silicon Transistors 2SB926/2SD1246 Large-Current Driving Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers, electrical unit mm equipment. 2003A [2SB926/2SD1246] Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO. JEDEC TO-92 B
8.3. Size:44K panasonic
2sd1244 e.pdf
Transistor 2SD1244 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. M type package allowing easy automatic and manual insertion as 0.85 well as stand-alone
8.4. Size:40K panasonic
2sd1244.pdf
Transistor 2SD1244 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. M type package allowing easy automatic and manual insertion as 0.85 well as stand-alone
8.5. Size:191K inchange semiconductor
2sd1242.pdf
isc Product Specification isc Silicon NPN Power Transistor 2SD1242 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High Current Capability Excellent Safe Operating Area Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Power amplifie
8.6. Size:210K inchange semiconductor
2sd1248.pdf
isc Silicon NPN Darlington Power Transistor 2SD1248 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 4A FE C Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAX
8.7. Size:208K inchange semiconductor
2sd1245.pdf
isc Silicon NPN Darlington Power Transistor 2SD1245 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High DC Current Gain h = 500(Min) @I = 2A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and Motor control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL
8.8. Size:191K inchange semiconductor
2sd1243.pdf
isc Product Specification isc Silicon NPN Power Transistor 2SD1243 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High Current Capability Excellent Safe Operating Area Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Power amplifie
8.9. Size:191K inchange semiconductor
2sd1241.pdf
isc Product Specification isc Silicon NPN Power Transistor 2SD1241 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High Current Capability Excellent Safe Operating Area Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Power amplifie
Otros transistores... 2SD1246R, 2SD1246S, 2SD1246T, 2SD1246U, 2SD1247, 2SD1247R, 2SD1247S, 2SD1247T, 2SD718, 2SD1248, 2SD1249, 2SD1249A, 2SD124A, 2SD124AH, 2SD125, 2SD1250, 2SD1250A
