Справочник транзисторов. 2SD1247U

 

Биполярный транзистор 2SD1247U - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SD1247U
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 1 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 2.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 150 MHz
   Ёмкость коллекторного перехода (Cc): 19 pf
   Статический коэффициент передачи тока (hfe): 280
   Корпус транзистора: TO92

 Аналоги (замена) для 2SD1247U

 

 

2SD1247U Datasheet (PDF)

 7.1. Size:83K  1
2sb927 2sd1247.pdf

2SD1247U
2SD1247U

 7.2. Size:88K  sanyo
2sd1247.pdf

2SD1247U
2SD1247U

Ordering number:1029CPNP/NPN Epitaxial Planar Silicon Transistors2SB927/2SD1247Large-Current Driving ApplicationsApplications Package Dimensions Power supplies, relay drivers, lamp drivers, electricalunit:mmequipment.2006A[2SB927/2SD1247]Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO.( ) : 2SB927 EIA

 8.1. Size:83K  1
2sb926 2sd1246.pdf

2SD1247U
2SD1247U

 8.2. Size:85K  sanyo
2sd1246.pdf

2SD1247U
2SD1247U

Ordering number:1030EPNP/NPN Epitaxial Planar Silicon Transistors2SB926/2SD1246Large-Current Driving ApplicationsApplications Package Dimensions Power supplies, relay drivers, lamp drivers, electricalunit:mmequipment.2003A[2SB926/2SD1246]Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO.JEDEC : TO-92 B

 8.3. Size:44K  panasonic
2sd1244 e.pdf

2SD1247U
2SD1247U

Transistor2SD1244Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Low collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.M type package allowing easy automatic and manual insertion as0.85well as stand-alone

 8.4. Size:40K  panasonic
2sd1244.pdf

2SD1247U
2SD1247U

Transistor2SD1244Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Low collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.M type package allowing easy automatic and manual insertion as0.85well as stand-alone

 8.5. Size:191K  inchange semiconductor
2sd1242.pdf

2SD1247U
2SD1247U

isc Product Specificationisc Silicon NPN Power Transistor 2SD1242DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh Current CapabilityExcellent Safe Operating AreaFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsPower amplifie

 8.6. Size:210K  inchange semiconductor
2sd1248.pdf

2SD1247U
2SD1247U

isc Silicon NPN Darlington Power Transistor 2SD1248DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 4AFE CLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAX

 8.7. Size:208K  inchange semiconductor
2sd1245.pdf

2SD1247U
2SD1247U

isc Silicon NPN Darlington Power Transistor 2SD1245DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh DC Current Gain: h = 500(Min) @I = 2AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and Motor controlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

 8.8. Size:191K  inchange semiconductor
2sd1243.pdf

2SD1247U
2SD1247U

isc Product Specificationisc Silicon NPN Power Transistor 2SD1243DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh Current CapabilityExcellent Safe Operating AreaFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsPower amplifie

 8.9. Size:191K  inchange semiconductor
2sd1241.pdf

2SD1247U
2SD1247U

isc Product Specificationisc Silicon NPN Power Transistor 2SD1241DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh Current CapabilityExcellent Safe Operating AreaFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsPower amplifie

Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2SA1943 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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