2SD1248 Datasheet. Equivalente

 ..1. Size:210K  inchange semiconductor
 2sd1248.pdf

isc Silicon NPN Darlington Power Transistor 2SD1248 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 4A FE C Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAX

 8.1. Size:83K  1
 2sb926 2sd1246.pdf

 8.2. Size:83K  1
 2sb927 2sd1247.pdf

 8.3. Size:85K  sanyo
 2sd1246.pdf

Ordering number 1030E PNP/NPN Epitaxial Planar Silicon Transistors 2SB926/2SD1246 Large-Current Driving Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers, electrical unit mm equipment. 2003A [2SB926/2SD1246] Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO. JEDEC TO-92 B

 8.4. Size:88K  sanyo
 2sd1247.pdf

Ordering number 1029C PNP/NPN Epitaxial Planar Silicon Transistors 2SB927/2SD1247 Large-Current Driving Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers, electrical unit mm equipment. 2006A [2SB927/2SD1247] Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO. ( ) 2SB927 EIA

 8.5. Size:44K  panasonic
 2sd1244 e.pdf

Transistor 2SD1244 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. M type package allowing easy automatic and manual insertion as 0.85 well as stand-alone

 8.6. Size:40K  panasonic
 2sd1244.pdf

Transistor 2SD1244 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. M type package allowing easy automatic and manual insertion as 0.85 well as stand-alone

 8.7. Size:191K  inchange semiconductor
 2sd1242.pdf

isc Product Specification isc Silicon NPN Power Transistor 2SD1242 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High Current Capability Excellent Safe Operating Area Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Power amplifie

 8.8. Size:208K  inchange semiconductor
 2sd1245.pdf

isc Silicon NPN Darlington Power Transistor 2SD1245 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High DC Current Gain h = 500(Min) @I = 2A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and Motor control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

 8.9. Size:191K  inchange semiconductor
 2sd1243.pdf

isc Product Specification isc Silicon NPN Power Transistor 2SD1243 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High Current Capability Excellent Safe Operating Area Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Power amplifie

 8.10. Size:191K  inchange semiconductor
 2sd1241.pdf

isc Product Specification isc Silicon NPN Power Transistor 2SD1241 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High Current Capability Excellent Safe Operating Area Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Power amplifie