isc Silicon NPN Darlington Power Transistor 2SD1248DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 4AFE CLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAX

Ordering number:1030EPNP/NPN Epitaxial Planar Silicon Transistors2SB926/2SD1246Large-Current Driving ApplicationsApplications Package Dimensions Power supplies, relay drivers, lamp drivers, electricalunit:mmequipment.2003A[2SB926/2SD1246]Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO.JEDEC : TO-92 B

Ordering number:1029CPNP/NPN Epitaxial Planar Silicon Transistors2SB927/2SD1247Large-Current Driving ApplicationsApplications Package Dimensions Power supplies, relay drivers, lamp drivers, electricalunit:mmequipment.2006A[2SB927/2SD1247]Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO.( ) : 2SB927 EIA

Transistor2SD1244Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Low collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.M type package allowing easy automatic and manual insertion as0.85well as stand-alone

Transistor2SD1244Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Low collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.M type package allowing easy automatic and manual insertion as0.85well as stand-alone

isc Product Specificationisc Silicon NPN Power Transistor 2SD1242DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh Current CapabilityExcellent Safe Operating AreaFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsPower amplifie

isc Silicon NPN Darlington Power Transistor 2SD1245DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh DC Current Gain: h = 500(Min) @I = 2AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and Motor controlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

isc Product Specificationisc Silicon NPN Power Transistor 2SD1243DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh Current CapabilityExcellent Safe Operating AreaFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsPower amplifie

isc Product Specificationisc Silicon NPN Power Transistor 2SD1241DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh Current CapabilityExcellent Safe Operating AreaFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsPower amplifie