2SD1253A Todos los transistores

 

2SD1253A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1253A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 80 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 80

Empaquetado / Estuche: TO251

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2SD1253A Datasheet (PDF)

1.1. 2sd1253a.pdf Size:1127K _kexin

2SD1253A
2SD1253A

SMD Type Transistors NPN Transistors 2SD1253A TO-252 Unit: mm +0.15 ■ Features 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) 0.127 +0.1 ● Complementary to 2SB930A 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2

3.1. 2sd1253.pdf Size:49K _panasonic

2SD1253A
2SD1253A

Power Transistors 2SD1253, 2SD1253A Silicon NPN triple diffusion planar type Unit: mm 8.5 0.2 3.4 0.3 For power amplification 6.0 0.5 1.0 0.1 Complementary to 2SB930 and 2SB930A Features High forward current transfer ratio hFE which has satisfactory linearity 1.5max. 1.1max. Low collector to emitter saturation voltage VCE(sat) N type package enabling direct soldering of the radiati

3.2. 2sd1253.pdf Size:1127K _kexin

2SD1253A
2SD1253A

SMD Type Transistors NPN Transistors 2SD1253 TO-252 Unit: mm +0.15 ■ Features 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) 0.127 +0.1 ● Complementary to 2SB930 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Co

Otros transistores... 2N3187 , 2N3188 , 2N3189 , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , TIP122 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 .

 
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