All Transistors. 2SD1253A Datasheet

 

2SD1253A Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1253A

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO251

2SD1253A Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1253A Datasheet (PDF)

1.1. 2sd1253a.pdf Size:1127K _kexin

2SD1253A
2SD1253A

SMD Type Transistors NPN Transistors 2SD1253A TO-252 Unit: mm +0.15 ■ Features 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) 0.127 +0.1 ● Complementary to 2SB930A 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2

3.1. 2sd1253.pdf Size:49K _panasonic

2SD1253A
2SD1253A

Power Transistors 2SD1253, 2SD1253A Silicon NPN triple diffusion planar type Unit: mm 8.5 0.2 3.4 0.3 For power amplification 6.0 0.5 1.0 0.1 Complementary to 2SB930 and 2SB930A Features High forward current transfer ratio hFE which has satisfactory linearity 1.5max. 1.1max. Low collector to emitter saturation voltage VCE(sat) N type package enabling direct soldering of the radiati

3.2. 2sd1253.pdf Size:1127K _kexin

2SD1253A
2SD1253A

SMD Type Transistors NPN Transistors 2SD1253 TO-252 Unit: mm +0.15 ■ Features 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) 0.127 +0.1 ● Complementary to 2SB930 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Co

Datasheet: 2SD125 , 2SD1250 , 2SD1250A , 2SD1251 , 2SD1251A , 2SD1252 , 2SD1252A , 2SD1253 , 9012 , 2SD1254 , 2SD1255 , 2SD1256 , 2SD1257 , 2SD1257A , 2SD1258 , 2SD1259 , 2SD1259A .

 
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