2SD125A
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD125A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 60
W
Tensión colector-base (Vcb): 100
V
Tensión colector-emisor (Vce): 75
V
Tensión emisor-base (Veb): 10
V
Corriente del colector DC máxima (Ic): 7
A
Temperatura operativa máxima (Tj): 125
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1
MHz
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar 2SD125A
2SD125A
Datasheet (PDF)
8.1. Size:48K panasonic
2sd1258.pdf 
Power Transistors2SD1258Silicon NPN triple diffusion planar typeUnit: mm8.5 0.2 3.4 0.3For power amplification with high forward current transfer ratio6.0 0.5 1.0 0.1Features1.5max. 1.1max.High foward current transfer ratio hFESatisfactory linearity of foward current transfer ratio hFE0.8 0.1 0.5max.N type package enabling direct soldering of the radiating fin
8.2. Size:58K panasonic
2sd1256.pdf
Power Transistors2SD1256Silicon NPN epitaxial planar typeUnit: mm8.5 0.2 3.4 0.3For power switching6.0 0.5 1.0 0.1Complementary to 2SB933Features1.5max. 1.1max.Low collector to emitter saturation voltage VCE(sat)Satisfactory linearity of foward current transfer ratio hFE0.8 0.1 0.5max.Large collector current IC2.54 0.3N type package enabling direct sold
8.3. Size:58K panasonic
2sd1254.pdf
Power Transistors2SD1254Silicon NPN epitaxial planar typeUnit: mm8.5 0.2 3.4 0.3For power switching6.0 0.5 1.0 0.1Complementary to 2SB931Features1.5max. 1.1max.Low collector to emitter saturation voltage VCE(sat)Satisfactory linearity of foward current transfer ratio hFE0.8 0.1 0.5max.Large collector current IC2.54 0.3N type package enabling direct sold
8.4. Size:48K panasonic
2sd1259.pdf
Power Transistors2SD1259, 2SD1259ASilicon NPN triple diffusion planar typeUnit: mm8.5 0.2 3.4 0.3For power amplification with high forward current transfer ratio6.0 0.5 1.0 0.1FeaturesHigh foward current transfer ratio hFE1.5max. 1.1max.Satisfactory linearity of foward current transfer ratio hFEN type package enabling direct soldering of the radiating fin to0.8
8.5. Size:49K panasonic
2sd1252.pdf
Power Transistors2SD1252, 2SD1252ASilicon NPN triple diffusion planar typeUnit: mm8.5 0.2 3.4 0.3For power amplification6.0 0.5 1.0 0.1Complementary to 2SB929 and 2SB929AFeaturesHigh forward current transfer ratio hFE which has satisfactory linearity1.5max. 1.1max.Low collector to emitter saturation voltage VCE(sat)N type package enabling direct soldering of the
8.6. Size:50K panasonic
2sd1251.pdf
Power Transistors2SD1251, 2SD1251ASilicon NPN triple diffusion junction typeUnit: mm8.5 0.2 3.4 0.3For power amplification6.0 0.5 1.0 0.1FeaturesWide area of safe operation (ASO)1.5max. 1.1max.N type package enabling direct soldering of the radiating fin tothe printed circuit board, etc. of small electronic equipment.0.8 0.1 0.5max.Absolute Maximum Ratings (T
8.7. Size:49K panasonic
2sd1253.pdf
Power Transistors2SD1253, 2SD1253ASilicon NPN triple diffusion planar typeUnit: mm8.5 0.2 3.4 0.3For power amplification6.0 0.5 1.0 0.1Complementary to 2SB930 and 2SB930AFeaturesHigh forward current transfer ratio hFE which has satisfactory linearity1.5max. 1.1max.Low collector to emitter saturation voltage VCE(sat)N type package enabling direct soldering of the
8.8. Size:62K panasonic
2sd1257.pdf
Power Transistors2SD1257, 2SD1257ASilicon NPN epitaxial planar typeUnit: mmFor power switching8.5 0.2 3.4 0.36.0 0.5 1.0 0.1Complementary to 2SB934FeaturesLow collector to emitter saturation voltage VCE(sat)1.5max. 1.1max.Satisfactory linearity of foward current transfer ratio hFELarge collector current IC0.8 0.1 0.5max.N type package enabling direct solder
8.9. Size:1198K kexin
2sd1256.pdf
SMD Type TransistorsNPN Transistors2SD1256TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Satisfactory linearity of foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) Large collector current IC0.127+0.10.80-0.1max Complementary to 2SB933+ 0.11 Base2.3 0.60- 0.1+0.1
8.10. Size:1127K kexin
2sd1253a.pdf
SMD Type TransistorsNPN Transistors2SD1253ATO-252 Unit: mm+0.15 Features6.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat)0.127+0.1 Complementary to 2SB930A0.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152
8.11. Size:1216K kexin
2sd1255.pdf
SMD Type TransistorsNPN Transistors2SD1255TO-252Unit: mm+0.156.50-0.15+0.1 Features2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat)0.127+0.1 Large collector current IC0.80-0.1max Complementary to 2SB932+ 0.11 Base2.3
8.12. Size:817K kexin
2sd1254.pdf
SMD Type TransistorsNPN Transistors2SD1254TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1 Features+0.25.30-0.2 +0.80.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat)0.127+0.10.80-0.1 Large collector current IC max Complementary to 2SB931+ 0.11 Base2.3 0
8.13. Size:1268K kexin
2sd1257a.pdf
SMD Type TransistorsNPN Transistors2SD1257ATO-252Unit: mm+0.156.50-0.15+0.1 Features 2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Satisfactory linearity of foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) Large collector current IC0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3
8.14. Size:1082K kexin
2sd1250.pdf
SMD Type TransistorsNPN Transistors2SD1250TO-252Unit: mm+0.156.50-0.15 Features +0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat)0.127 Complementary to 2SB928 +0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Co
8.15. Size:1079K kexin
2sd1250a.pdf
SMD Type TransistorsNPN Transistors2SD1250ATO-252Unit: mm+0.156.50-0.15 Features +0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat)0.127 Complementary to 2SB928 +0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 C
8.16. Size:1147K kexin
2sd1252.pdf
SMD Type TransistorsNPN Transistors2SD1252TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features High forward current transfer ratio hFE which has satisfactory linearity0.127+0.1 Low collector to emitter saturation voltage VCE(sat)0.80-0.1max Complementary to 2SB929+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152
8.17. Size:1144K kexin
2sd1252a.pdf
SMD Type TransistorsNPN Transistors2SD1252ATO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features High forward current transfer ratio hFE which has satisfactory linearity0.127+0.1 Low collector to emitter saturation voltage VCE(sat)0.80-0.1max Complementary to 2SB929A+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.15
8.18. Size:1127K kexin
2sd1253.pdf
SMD Type TransistorsNPN Transistors2SD1253TO-252 Unit: mm+0.15 Features6.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat)0.127+0.1 Complementary to 2SB9300.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Co
8.19. Size:861K kexin
2sd1257.pdf
SMD Type TransistorsNPN Transistors2SD1257TO-252Unit: mm+0.156.50-0.15+0.1 Features 2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Satisfactory linearity of foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) Large collector current IC0.127+0.1 Complementary to 2SB934 0.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.15
8.20. Size:222K inchange semiconductor
2sd1255.pdf
isc Silicon NPN Power Transistor 2SD1255DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.5V(Max.)@ I = 3.0ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSPower amplifier applicationsSwitching regulatorsABSOLUT
Otros transistores... 2SA1771
, 2SA178
, 2SA1790
, 2SA1791
, 2SA1792
, 2SA1793
, 2SA1794
, 2SA1795
, BC557
, 2SA1799
, 2SA17H
, 2SA18
, 2SA180
, 2SA1800
, 2SA1800O
, 2SA1800R
, 2SA1800Y
.
