All Transistors. 2SD125A Datasheet

 

2SD125A Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD125A

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 75 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO3

2SD125A Transistor Equivalent Substitute - Cross-Reference Search

 

2SD125A Datasheet (PDF)

4.1. 2sd1257.pdf Size:62K _panasonic

2SD125A
2SD125A

Power Transistors 2SD1257, 2SD1257A Silicon NPN epitaxial planar type Unit: mm For power switching 8.5 0.2 3.4 0.3 6.0 0.5 1.0 0.1 Complementary to 2SB934 Features Low collector to emitter saturation voltage VCE(sat) 1.5max. 1.1max. Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 0.8 0.1 0.5max. N type package enabling direct soldering of t

4.2. 2sd1253.pdf Size:49K _panasonic

2SD125A
2SD125A

Power Transistors 2SD1253, 2SD1253A Silicon NPN triple diffusion planar type Unit: mm 8.5 0.2 3.4 0.3 For power amplification 6.0 0.5 1.0 0.1 Complementary to 2SB930 and 2SB930A Features High forward current transfer ratio hFE which has satisfactory linearity 1.5max. 1.1max. Low collector to emitter saturation voltage VCE(sat) N type package enabling direct soldering of the radiati

 4.3. 2sd1251.pdf Size:50K _panasonic

2SD125A
2SD125A

Power Transistors 2SD1251, 2SD1251A Silicon NPN triple diffusion junction type Unit: mm 8.5 0.2 3.4 0.3 For power amplification 6.0 0.5 1.0 0.1 Features Wide area of safe operation (ASO) 1.5max. 1.1max. N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 0.8 0.1 0.5max. Absolute Maximum Ratings (TC=25?C)

4.4. 2sd1256.pdf Size:58K _panasonic

2SD125A
2SD125A

Power Transistors 2SD1256 Silicon NPN epitaxial planar type Unit: mm 8.5 0.2 3.4 0.3 For power switching 6.0 0.5 1.0 0.1 Complementary to 2SB933 Features 1.5max. 1.1max. Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE 0.8 0.1 0.5max. Large collector current IC 2.54 0.3 N type package enabling direct soldering of

 4.5. 2sd1259.pdf Size:48K _panasonic

2SD125A
2SD125A

Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type Unit: mm 8.5 0.2 3.4 0.3 For power amplification with high forward current transfer ratio 6.0 0.5 1.0 0.1 Features High foward current transfer ratio hFE 1.5max. 1.1max. Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5

4.6. 2sd1258.pdf Size:48K _panasonic

2SD125A
2SD125A

Power Transistors 2SD1258 Silicon NPN triple diffusion planar type Unit: mm 8.5 0.2 3.4 0.3 For power amplification with high forward current transfer ratio 6.0 0.5 1.0 0.1 Features 1.5max. 1.1max. High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE 0.8 0.1 0.5max. N type package enabling direct soldering of the radiating fin to 2.54

4.7. 2sd1252.pdf Size:49K _panasonic

2SD125A
2SD125A

Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type Unit: mm 8.5 0.2 3.4 0.3 For power amplification 6.0 0.5 1.0 0.1 Complementary to 2SB929 and 2SB929A Features High forward current transfer ratio hFE which has satisfactory linearity 1.5max. 1.1max. Low collector to emitter saturation voltage VCE(sat) N type package enabling direct soldering of the radiati

4.8. 2sd1254.pdf Size:58K _panasonic

2SD125A
2SD125A

Power Transistors 2SD1254 Silicon NPN epitaxial planar type Unit: mm 8.5 0.2 3.4 0.3 For power switching 6.0 0.5 1.0 0.1 Complementary to 2SB931 Features 1.5max. 1.1max. Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE 0.8 0.1 0.5max. Large collector current IC 2.54 0.3 N type package enabling direct soldering of

4.9. 2sd1257.pdf Size:861K _kexin

2SD125A
2SD125A

SMD Type Transistors NPN Transistors 2SD1257 TO-252 Unit: mm +0.15 6.50-0.15 +0.1 ■ Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ● Satisfactory linearity of foward current transfer ratio hFE ● Low collector to emitter saturation voltage VCE(sat) ● Large collector current IC 0.127 +0.1 ● Complementary to 2SB934 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15

4.10. 2sd1253.pdf Size:1127K _kexin

2SD125A
2SD125A

SMD Type Transistors NPN Transistors 2SD1253 TO-252 Unit: mm +0.15 ■ Features 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) 0.127 +0.1 ● Complementary to 2SB930 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Co

4.11. 2sd1250a.pdf Size:1079K _kexin

2SD125A
2SD125A

SMD Type Transistors NPN Transistors 2SD1250A TO-252 Unit: mm +0.15 6.50-0.15 ■ Features +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) 0.127 ● Complementary to 2SB928 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 C

4.12. 2sd1256.pdf Size:1198K _kexin

2SD125A
2SD125A

SMD Type Transistors NPN Transistors 2SD1256 TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ■ Features ● Satisfactory linearity of foward current transfer ratio hFE ● Low collector to emitter saturation voltage VCE(sat) ● Large collector current IC 0.127 +0.1 0.80-0.1 max ● Complementary to 2SB933 + 0.1 1 Base 2.3 0.60- 0.1 +0.1

4.13. 2sd1257a.pdf Size:1268K _kexin

2SD125A
2SD125A

SMD Type Transistors NPN Transistors 2SD1257A TO-252 Unit: mm +0.15 6.50-0.15 +0.1 ■ Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ● Satisfactory linearity of foward current transfer ratio hFE ● Low collector to emitter saturation voltage VCE(sat) ● Large collector current IC 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3

4.14. 2sd1253a.pdf Size:1127K _kexin

2SD125A
2SD125A

SMD Type Transistors NPN Transistors 2SD1253A TO-252 Unit: mm +0.15 ■ Features 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) 0.127 +0.1 ● Complementary to 2SB930A 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2

4.15. 2sd1252a.pdf Size:1144K _kexin

2SD125A
2SD125A

SMD Type Transistors NPN Transistors 2SD1252A TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity 0.127 +0.1 ● Low collector to emitter saturation voltage VCE(sat) 0.80-0.1 max ● Complementary to 2SB929A + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15

4.16. 2sd1255.pdf Size:1216K _kexin

2SD125A
2SD125A

SMD Type Transistors NPN Transistors 2SD1255 TO-252 Unit: mm +0.15 6.50-0.15 +0.1 ■ Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) 0.127 +0.1 ● Large collector current IC 0.80-0.1 max ● Complementary to 2SB932 + 0.1 1 Base 2.3

4.17. 2sd1250.pdf Size:1082K _kexin

2SD125A
2SD125A

SMD Type Transistors NPN Transistors 2SD1250 TO-252 Unit: mm +0.15 6.50-0.15 ■ Features +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) 0.127 ● Complementary to 2SB928 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Co

4.18. 2sd1252.pdf Size:1147K _kexin

2SD125A
2SD125A

SMD Type Transistors NPN Transistors 2SD1252 TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity 0.127 +0.1 ● Low collector to emitter saturation voltage VCE(sat) 0.80-0.1 max ● Complementary to 2SB929 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2

4.19. 2sd1254.pdf Size:817K _kexin

2SD125A
2SD125A

SMD Type Transistors NPN Transistors 2SD1254 TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 ■ Features +0.2 5.30-0.2 +0.8 0.50 -0.7 ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) 0.127 +0.1 0.80-0.1 ● Large collector current IC max ● Complementary to 2SB931 + 0.1 1 Base 2.3 0

Datasheet: 2SA1575 , 2SA1575C , 2SA1575D , 2SA1575E , 2SA1575F , 2SA1576 , 2SA1577 , 2SA1578 , BC547 , 2SA1579P , 2SA1579Q , 2SA1579R , 2SA1579S , 2SA1580-3 , 2SA1580-4 , 2SA1580-5 , 2SA1581 .

 
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