2SD1288 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1288 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Typ)@I = 4.0A CE(sat) C Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Complement to Type 2SB965 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power

Transistor 2SD1280 Silicon NPN epitaxial planer type For low-voltage type medium output power amplification Unit mm 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the 45 low-voltage power supply. Mini Power type package, allowing downsizing of the equipment 0.4 0.08 and

Transistor 2SD1280 Silicon NPN epitaxial planer type For low-voltage type medium output power amplification Unit mm 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the 45 low-voltage power supply. Mini Power type package, allowing downsizing of the equipment 0.4 0.08 and

SMD Type Transistors NPN Transistors 2SD1280 1.70 0.1 Features Satisfactory operation performances at high efficiency with the low-voltage power supply. Low collector to emitter saturation voltage VCE(sat) 0.42 0.1 0.46 0.1 Complementary to 2SB956 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Ba

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1286-Z DESCRIPTION With TO-252(DPAK) packaging Very high DC current gain Monolithic darlington transistor with integrated antiparallel collector-emitter diode Complement to type 2SB963-Z Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AC-DC motor control

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1289 DESCRIPTION Low Collector Saturation Voltage V = 0.65V(Typ)@I = 5.0A CE(sat) C Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Complement to Type 2SB966 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1286 DESCRIPTION With TO-251(IPAK) packaging Very high DC current gain Monolithic darlington transistor with integrated antiparallel collector-emitter diode Complement to type 2SB963 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AC-DC motor control El