Биполярный транзистор 2SD1288 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD1288
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 70 W
Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
Макcимальный постоянный ток коллектора (Ic): 7 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: TO126
2SD1288 Datasheet (PDF)
2sd1288.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1288DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Typ)@I = 4.0ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOComplement to Type 2SB965100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power
2sd1280 e.pdf
Transistor2SD1280Silicon NPN epitaxial planer typeFor low-voltage type medium output power amplificationUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with the45low-voltage power supply.Mini Power type package, allowing downsizing of the equipment0.4 0.08and
2sd1280.pdf
Transistor2SD1280Silicon NPN epitaxial planer typeFor low-voltage type medium output power amplificationUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with the45low-voltage power supply.Mini Power type package, allowing downsizing of the equipment0.4 0.08and
2sd1280.pdf
SMD Type TransistorsNPN Transistors2SD12801.70 0.1 Features Satisfactory operation performances at high efficiency with the low-voltage power supply. Low collector to emitter saturation voltage VCE(sat)0.42 0.10.46 0.1 Complementary to 2SB9561.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Ba
2sd1286-z.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1286-ZDESCRIPTIONWith TO-252(DPAK) packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeComplement to type 2SB963-ZMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor control
2sd1289.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1289DESCRIPTIONLow Collector Saturation Voltage: V = 0.65V(Typ)@I = 5.0ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOComplement to Type 2SB966100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power
2sd1286.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1286DESCRIPTIONWith TO-251(IPAK) packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeComplement to type 2SB963Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlEl
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2N1552A | 2SC693FP | MA892
History: 2N1552A | 2SC693FP | MA892
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050