2SD129. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SD129 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD129

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25 W

Tensión colector-base (Vcb): 90 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1 MHz

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO66

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2SD129 datasheet

0.1. Size:98K 1
2sd1292 2sd1293m.pdf pdf_icon

0.2. Size:209K toshiba
2sd1294.pdf pdf_icon

0.3. Size:97K rohm
2sd1292.pdf pdf_icon

0.4. Size:37K no
2sd1291.pdf pdf_icon

0.5. Size:38K no
2sd1297.pdf pdf_icon

0.6. Size:117K jmnic
2sd1294.pdf pdf_icon

Product Specification www.jmnic.com Silicon Power Transistors 2SD1294 DESCRIPTION With TO-3P(I) package Included avalanche diode High DC current gain Darlington connected type APPLICATIONS Power regulator for line operated TV PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 emitter Fig.1 simplified outline (TO-3P(I)) and symbol

0.7. Size:74K jmnic
2sd1290.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1290 DESCRIPTION With TO-3PN package Built-in damper diode High voltage ,high reliability Wide area of safe operation APPLICATIONS For color TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified out

0.8. Size:75K jmnic
2sd1291.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1291 DESCRIPTION With TO-3PN package Built-in damper diode High voltage ,high reliability Wide area of safe operation APPLICATIONS For color TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified out

0.9. Size:82K jmnic
2sd1296.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1296 DESCRIPTION With TO-3PN package High DC current gain Low saturation voltage APPLICATIONS For audio frequency power amplifier and low speed high current switching industrial use PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) a

0.10. Size:28K jmnic
2sd1297.pdf pdf_icon

Product Specification www.jmnic.com 2SD1297 Silicon NPN Transistors B C E Features Darlington With TO-3PFa package Low speed power switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 100 V VEBO Emitter to base voltage 5 V IC Collector current-Continuous 25 A

0.11. Size:1098K kexin
2sd1295.pdf pdf_icon

0.12. Size:215K inchange semiconductor
2sd1294.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1294 DESCRIPTION Included Avalanche Diode- V = 60 15V Z High DC Current Gain h = 2000 20000@ I = 0.5A, V = 5V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power regulator for line operated TV applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

0.13. Size:213K inchange semiconductor
2sd1290.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1290 DESCRIPTION High Voltage Wide Area of Safe Operation Built-in damper diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V

0.14. Size:216K inchange semiconductor
2sd1298.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1298 DESCRIPTION High DC Current Gain h = 200(Min.)@ I = 6A, V = 2V FE C CE High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low s

0.15. Size:214K inchange semiconductor
2sd1291.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1291 DESCRIPTION High Voltage Wide Area of Safe Operation Built-in damper diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V

0.16. Size:221K inchange semiconductor
2sd1296.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1296 DESCRIPTION High DC Current Gain h = 1000(Min.)@ I = 15A, V = 2V FE C CE High Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low

0.17. Size:220K inchange semiconductor
2sd1297.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1297 DESCRIPTION High DC Current Gain h = 1000(Min.)@ I = 15A, V = 2V FE C CE High Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low

Otros transistores... 2SD1282 , 2SD1283 , 2SD1284 , 2SD1286 , 2SD1287 , 2SD1288 , 2SD1289 , 2SD128A , C1815 , 2SD1290 , 2SD1291 , 2SD1292 , 2SD1293M , 2SD1294 , 2SD1295 , 2SD1296 , 2SD1297 .