2SD129. Аналоги и основные параметры
Наименование производителя: 2SD129
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 90 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 125 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 1 MHz
Статический коэффициент передачи тока (hFE): 30
Корпус транзистора: TO66
Аналоги (замена) для 2SD129
- подборⓘ биполярного транзистора по параметрам
2SD129 даташит
0.6. Size:117K jmnic
2sd1294.pdf 
Product Specification www.jmnic.com Silicon Power Transistors 2SD1294 DESCRIPTION With TO-3P(I) package Included avalanche diode High DC current gain Darlington connected type APPLICATIONS Power regulator for line operated TV PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 emitter Fig.1 simplified outline (TO-3P(I)) and symbol
0.7. Size:74K jmnic
2sd1290.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1290 DESCRIPTION With TO-3PN package Built-in damper diode High voltage ,high reliability Wide area of safe operation APPLICATIONS For color TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified out
0.8. Size:75K jmnic
2sd1291.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1291 DESCRIPTION With TO-3PN package Built-in damper diode High voltage ,high reliability Wide area of safe operation APPLICATIONS For color TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified out
0.9. Size:82K jmnic
2sd1296.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1296 DESCRIPTION With TO-3PN package High DC current gain Low saturation voltage APPLICATIONS For audio frequency power amplifier and low speed high current switching industrial use PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) a
0.10. Size:28K jmnic
2sd1297.pdf 
Product Specification www.jmnic.com 2SD1297 Silicon NPN Transistors B C E Features Darlington With TO-3PFa package Low speed power switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 100 V VEBO Emitter to base voltage 5 V IC Collector current-Continuous 25 A
0.12. Size:215K inchange semiconductor
2sd1294.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1294 DESCRIPTION Included Avalanche Diode- V = 60 15V Z High DC Current Gain h = 2000 20000@ I = 0.5A, V = 5V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power regulator for line operated TV applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU
0.13. Size:213K inchange semiconductor
2sd1290.pdf 
isc Silicon NPN Power Transistor 2SD1290 DESCRIPTION High Voltage Wide Area of Safe Operation Built-in damper diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V
0.14. Size:216K inchange semiconductor
2sd1298.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1298 DESCRIPTION High DC Current Gain h = 200(Min.)@ I = 6A, V = 2V FE C CE High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low s
0.15. Size:214K inchange semiconductor
2sd1291.pdf 
isc Silicon NPN Power Transistor 2SD1291 DESCRIPTION High Voltage Wide Area of Safe Operation Built-in damper diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V
0.16. Size:221K inchange semiconductor
2sd1296.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1296 DESCRIPTION High DC Current Gain h = 1000(Min.)@ I = 15A, V = 2V FE C CE High Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low
0.17. Size:220K inchange semiconductor
2sd1297.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1297 DESCRIPTION High DC Current Gain h = 1000(Min.)@ I = 15A, V = 2V FE C CE High Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low
Другие транзисторы: 2SD1282, 2SD1283, 2SD1284, 2SD1286, 2SD1287, 2SD1288, 2SD1289, 2SD128A, C1815, 2SD1290, 2SD1291, 2SD1292, 2SD1293M, 2SD1294, 2SD1295, 2SD1296, 2SD1297
