2SD13 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SD1314 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1314 High Power Switching Applications Unit: mm Motor Control Applications High DC current gain: hFE = 100 (min) (V = 5 V, I = 15 A) CE C Low saturation voltage: V = 2 V (max) (I = 15 A, I = 0.4 A) CE (sat) C B High speed: t = 3 s (max) (I = 15 A) f CMaximum Ratings

Ordering number:1245CPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB986/2SD134850V/4A Switching ApplicationsApplications Package Dimensions Power supplies, relay drivers, lamp drivers, electricalunit:mmequipment.2009B[2SB986/2SD1348]Features Adoption of FBET and MBIT processes. Low saturation voltage. High current capacity and wide ASO.JEDEC :

Ordering number:1244CPNP/NPN Epitaxial Planar Silicon Transistors2SB985/2SD1347Large-Current Driving ApplicationsApplcations Package Dimensions Power supplies, relay drivers, lamp drivers, electricalunit:mmequipment.2006A[2SB985/2SD1347]Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO.EIAJ : SC-51 B :

Preliminary Datasheet R07DS0280EJ03002SD1306 (Previous: REJ03G0784-0200)Rev.3.00Silicon NPN Epitaxial Mar 28, 2011Application Low frequency amplifier, Muting Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)1. Emitter32. Base3. Collector12Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCol

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SB852K / 2SA830STransistorsTransistors2SD1383K / 2SC1645S(96-118-B20)(96-205-D20)280Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document a

2SD1383KDatasheetHigh-gain Amplifer Transistor (32V, 0.3A)lOutlinel SOT-346 Parameter Value SC-59 VCES32VIC0.3AR 4kSMT3lFeatures lInner circuitl l1)Darlington connection for high DC current gain.2)Built-in 4k resistor between base and emitter.3)Complements the 2SB852K.lApplicationlHIGH GAIN AMPLIFIER

2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381FTransistorsPower Transistor (80V, 1A)2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 /2SD1381F Features External dimensions (Units : mm)1) High VCEO, VCEO=80V2SD18982) High IC, IC=1A (DC)4.5+0.2-0.13) Good hFE linearity 1.5+0.21.60.1 -0.14) Low VCE (sat)5) Complements the 2SB1260 /(1) (2) (3)0.4+0.1-0.05 2SB1241 / 2SB

Transistor2SD1385Silicon NPN triple diffusion planer typeFor low-frequency output amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High collector to base voltage VCBO.High collector to emitter voltage VCEO.Large collector power dissipation PC.Low collector to emitter saturation voltage VCE(sat).0.85M type package allowing easy automatic and manual

Transistor2SD1302Silicon NPN epitaxial planer typeFor low-voltage output amplificationUnit: mmFor muting5.0 0.2 4.0 0.2For DC-DC converterFeaturesLow collector to emitter saturation voltage VCE(sat).Low ON resistance Ron.High foward current transfer ratio hFE.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Colle

Transistor2SD1385Silicon NPN triple diffusion planer typeFor low-frequency output amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High collector to base voltage VCBO.High collector to emitter voltage VCEO.Large collector power dissipation PC.Low collector to emitter saturation voltage VCE(sat).0.85M type package allowing easy automatic and manual

Transistor2SD1302Silicon NPN epitaxial planer typeFor low-voltage output amplificationUnit: mmFor muting5.0 0.2 4.0 0.2For DC-DC converterFeaturesLow collector to emitter saturation voltage VCE(sat).Low ON resistance Ron.High foward current transfer ratio hFE.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Colle

Power Transistors2SD1326Silicon NPN triple diffusion planar type DarlingtonUnit: mmFor midium speed power switching10.0 0.2 4.2 0.25.5 0.2 2.7 0.2Features Incorporating a zener diode of 60V zener voltage between col- 3.1 0.1lector and base Minimized variation in the breakdown voltage Large energy handling capability High-speed switching1.3 0.21.4 0.

Power Transistors2SD1327Silicon NPN triple diffusion planar type DarlingtonFor midium speed power switchingUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2Features Incorporating a zener diode of 60V zener voltage between col-lector and base 3.1 0.1 Minimized variation in the breakdown voltage Large energy handling capability High-speed switching1.3 0.2 Full-pa

Transistor2SD1328Silicon NPN epitaxial planer typeFor low-voltage output amplificationUnit: mmFor mutingFor DC-DC converter+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesLow collector to emitter saturation voltage VCE(sat).1Low ON resistance Ron.3High foward current transfer ratio hFE.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratin

Transistor2SD1330Silicon NPN epitaxial planer typeFor low-voltage output amplificationUnit: mmFor muting6.9 0.1 2.5 0.1For DC-DC converter1.51.5 R0.9 1.0R0.9FeaturesLow collector to emitter saturation voltage VCE(sat).Low ON resistance Ron.High foward current transfer ratio hFE.0.85M type package allowing easy automatic and manual insertion as0.55 0.1 0.4

Transistor2SD1304Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm+0.22.8 0.3+0.25Features0.65 0.15 1.5 0.05 0.65 0.15Zener diode built in.Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazinepacking.32Absolute Maximum Ratings (Ta=25C)0.1 to 0.3Parameter S

Transistor2SD1350, 2SD1350ASilicon NPN triple diffusion planer typeFor high breakdown voltage switchingUnit: mmFeaturesHigh collector to base voltage VCBO.6.9 0.1 2.5 0.11.5High collector to emitter voltage VCEO.1.5 R0.9 1.0 R0.9Large collector power dissipation PC.Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and man

Transistor2SD1350, 2SD1350ASilicon NPN triple diffusion planer typeFor high breakdown voltage switchingUnit: mmFeaturesHigh collector to base voltage VCBO.6.9 0.1 2.5 0.11.5High collector to emitter voltage VCEO.1.5 R0.9 1.0 R0.9Large collector power dissipation PC.Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and man

Transistor2SD1328Silicon NPN epitaxial planer typeFor low-voltage output amplificationUnit: mmFor mutingFor DC-DC converter+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesLow collector to emitter saturation voltage VCE(sat).1Low ON resistance Ron.3High foward current transfer ratio hFE.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratin

Transistors2SD1330Silicon NPN epitaxial planar typeFor low-voltage output amplificationUnit: mmFor muting2.50.16.90.1For DC-DC converter(1.0)(1.5)(1.5) Features Low collector-emitter saturation voltage VCE(sat) R 0.9 Low ON resistance Ron R 0.7 High forward current transfer ratio hFE M type package allowing easy automatic and manual insertion a

2SD1306Silicon NPN EpitaxialADE-208-1144 (Z)1st. EditionMar. 2001ApplicationLow frequency amplifier, MutingOutlineMPAK311. Emitter2. Base23. Collector2SD1306Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 15 VEmitter to base voltage VEBO 5VCollector current IC 0.7 AColl

2SD1367Silicon NPN EpitaxialApplication Low frequency power amplifier Complementary pair with 2SB1001OutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SD1367Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 20 VCollector to emitter voltage VCEO 16 VEmitter to base voltage VEBO 6VCollector

2SD1368Silicon NPN EpitaxialApplication Low frequency power amplifier Complementary pair with 2SB1002OutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SD1368Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 100 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 6VCollector

2SD1376(K)Silicon NPN EpitaxialApplicationLow frequency power amplifier complementary pair with 2SB1012(K)OutlineTO-126 MOD231. EmitterID2. Collector3. Base16 k 0.5 k23(Typ) (Typ)12SD1376(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base vol

2SD1366Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SD1366Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 5VCollector current IC 1ACollector peak current iC(

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NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR2SD1397COLOR TV HORIZONTAL OUTPUTAPPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) SC-65 High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current

SMD Type TransistorsNPN Transistors2SD1306SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=0.7A Collector Emitter Voltage VCEO=15V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collec

SMD Type TransistorsNPN Transistors2SD1367 Features 1.70 0.1 Low frequency power amplifier Complementary to 2SB10010.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 16 V Emitter - Base Voltage VEBO 6 Collector Current - Continuo

SMD Type TransistorsNPN Transistors2SD13681.70 0.1 Features Low frequency power amplifier Complementary to 2SB10020.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 6 Collector Current - Contin

SMD Type TransistorsNPN Transistors2SD1328SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=20V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collec

SMD Type TransistorsNPN Transistors2SD13661.70 0.1 Features Low frequency power amplifier Complementary to 2SB10000.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 5 Collector Current - Continu

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1393DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 0.8AFE CLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose am

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1300DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 1500V (Min.)(BR)CBOLow Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =

isc Silicon NPN Power Transistor 2SD1345DESCRIPTIONHigh Switching TimeLow Collector Saturation Voltage: V = 0.4V(Max)@I = 4ACE(sat) CWide Area of Safe OperationComplement to Type 2SB983Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSInverters, convertersControllers for DC motor, pulse motorSwitching power sup

isc Silicon NPN Power Transistor 2SD133DESCRIPTIONCollector Current: I = 7ACCollector-Emitter BreakdownVoltage-: V = 120V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volt

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1370DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 3A, V = 3VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliab

isc Silicon NPN Power Transistor 2SD1371DESCRIPTIONHigh VoltageHigh Speed SwitchingHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching mode power supply and electronicballast applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1361DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 250V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 4ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 2A, V = 2VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliab

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1373DESCRIPTIONHigh Collector-Base Voltage-: V = 300V(Min.)CBOGood Linearity of hFEHigh Speed SwitchingWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage,high-speed,power switchingregulators and ge

isc Silicon NPN Power Transistor 2SD1398DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedBuilt-in damper diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base V

isc Silicon NPN Power Transistor 2SD1311DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 1.5V(Max.)@I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS

isc Silicon NPN Power Transistor 2SD1344DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1360DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 4ACE(sat) CHigh DC Current Gain: h = 600(Min) @ I = 2A, V = 2VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliabl

isc Silicon NPN Power Transistor 2SD1342DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

isc Silicon NPN Power Transistor 2SD1351DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOCollector Power Dissipation-: P = 30W@ T = 25C CLow Collector Saturation Voltage-: V = 1.0V(Max)@ (I = 2A, I = 0.2A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose

isc Silicon NPN Power Transistor 2SD1399DESCRIPTIONHigh Breakdown Voltage: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in damper diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

isc Silicon NPN Power Transistor 2SD1313DESCRIPTIONHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 350V(Min)(BR)CEOHigh Speed SwitchingLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power amplifier applications.High power switching applications.ABSOLUTE

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1394DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain: h = 2000(Min) @I = 1.5AFE CLow Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amp

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1301DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 3.0V(Max.)@ I = 1ACE(sat) CWide area of safe operationBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned f

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1377DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh DC Current Gain: h = 2000(Min) @I = 4AFE CLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amp

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1357DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 3A, V = 3VFE C CEComplement to Type 2SB997Minimum Lot-to-Lot variations for robust deviceperformance and r

isc Silicon NPN Power Transistor 2SD1378DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOLow Saturation Voltage -: V = 0.4V(Max)@ I = 0.5ACE(sat) CComplement to Type 2SB1007Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RAT

isc Silicon NPN Power Transistor 2SD1348DESCRIPTIONHigh Collector Current-I = 4.0ACLow Saturation Voltage -: V = 0.5V(Max)@ I = 2A, I = 0.1ACE(sat) C BGood Linearity of hFEComplement to Type 2SB986Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power supplies, relay drivers, lamp drivers,electrical

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1374DESCRIPTIONHigh Collector-Base Voltage-: V = 300V(Min.)CBOGood Linearity of hFEHigh Speed SwitchingWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage,high-speed,power switchingregulators and ge

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1375DESCRIPTIONHigh Collector-Base Voltage-: V = 300V(Min.)CBOGood Linearity of hFEHigh Speed SwitchingWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage,high-speed,power switchingregulators and ge

isc Silicon NPN Power Transistor 2SD1338DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1386DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOHigh DC Current Gain: h = 2000(Min) @I = 4AFE CLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1355DESCRIPTIONLow Collector Saturation Voltage: V = 2.0V(Max)@ I = 4ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 100V (Min)(BR)CEOComplement to Type 2SB995Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Recommended fo

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1372DESCRIPTIONHigh Collector-Base Voltage-: V = 300V(Min.)CBOHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage,high-speed,power switchingregulators,converters,inverters,motor control system.ABSOLUTE MAXIMUM RAT

isc Silicon NPN Darlington Power Transistor 2SD1309DESCRIPTIONHigh DC Current Gain:h = 2000(Min) @ I = 3AFE CCollector-Emitter Sustaining Voltage-:V = 100V (Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-:V = 1.5V (Max) @ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio freq

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD130DESCRIPTIONDC Current Gain -h = 15(Min)@ I = 3AFE CCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR) CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =

isc Silicon NPN Power Transistor 2SD1390DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line-operated horizontal deflection outputapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1307DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 350V(Min)CEO(SUS)High DC current gainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverAbsolute maximum ratings(Ta=25)SYMBOL PARAMET

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1362DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector Power Dissipation-: P = 40W@ T = 25C CLow Collector Saturation Voltage-: V = 0.5V(Max)@ I = 4ACE(sat) CComplement to Type 2SB992Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLI

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1365DESCRIPTIONHigh Collector-Base Voltage: V = 800V(Min)(BR)CBOLow Collector Saturation Voltage-: V = 1.5V(Max)@ I = 2ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsMotor control systems.Power ampli

isc Silicon NPN Power Transistor 2SD1340DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1358DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 3A, V = 3VFE C CEComplement to Type 2SB998Minimum Lot-to-Lot variations for robust deviceperformance and re

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1314DESCRIPTIONHigh DC Current Gain:h = 100(Min) @ I = 15AFE CCollector-Emitter Sustaining Voltage-:V = 450V (Min)CEO(SUS)Fast Switching SpeedLow Collector-Emitter Saturation Voltage-:V = 2.0V (Max) @ I = 15ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable o

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1395DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 2.5AFE CLow Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amp

isc Silicon NPN Power Transistor 2SD1397DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

isc Silicon NPN Darlington Power Transistor 2SD1376DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = 1AFE CCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-Complement to Type 2SB1012Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency powe

isc Silicon NPN Power Transistor 2SD1391DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line-operated horizontal deflection outputapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150

isc Silicon NPN Darlington Power Transistor 2SD1308DESCRIPTIONHigh DC Current Gain:h = 2000(Min) @ I = 2AFE CCollector-Emitter Sustaining Voltage-:V = 100V (Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-:V = 1.5V (Max) @ I = 2ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio freq

isc Silicon NPN Power Transistor 2SD1380DESCRIPTIONHigh Collector Current -I = 2ACCollector-Emitter Breakdown Voltage-: V = 32V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SB1009Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier application

isc Silicon NPN Power Transistor 2SD1352DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB989Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applicationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect

isc Silicon NPN Darlington Power Transistor 2SD1336DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain: h = 1500(Min) @ I = 5A, V = 4VFE C CEHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Power Transistor 2SD1396DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage