2SD13 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD13
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO36
2SD13 Transistor Equivalent Substitute - Cross-Reference Search
2SD13 Datasheet (PDF)
1.1. 2sd1391.pdf 
Size:56K _st
SD1391 RF & MICROWAVE TRANSISTORS UHF BASE STATION APPLICATIONS P RELIMINARY DATA .470 MHZ .24 VOLTS .EFFICIENCY 50% MIN. .POUT 15 W WITH 11.0 dB MIN. GAIN = .CLASS AB .COMMON EMITTER .2 30 x .3 60 6LF L (M14 2) ORDE R CODE BRANDING SD1391 SD1391 PIN CONNECTION DESCRIPTION The SD1391 is a gold metallized NPN planar tran- sistor using diffused emitter ballast resistors for reliabi
1.2. 2sd1398.pdf Size:72K _st
SD1398 RF & MICROWAVE TRANSISTORS 850-960 MHz APPLICATIONS .850 - 960 MHZ .24 VOLTS .COMMON EMITTER .OVERLAY GEOMETRY .GOLD METALLIZATION .P 6.0 W MIN. WITH 10.0 dB GAIN = OUT .230 6LFL (M142) epoxy sealed ORDER CODE BRANDING SD1398 SD1398 PIN CONNECTION DESCRIPTION The SD1398 is a gold metallized epitaxial silicon NPN transistor designed for high linearity Class AB operation ce
1.3. 2sd1314.pdf Size:170K _toshiba
2SD1314 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1314 High Power Switching Applications Unit: mm Motor Control Applications • High DC current gain: hFE = 100 (min) (V = 5 V, I = 15 A) CE C • Low saturation voltage: V = 2 V (max) (I = 15 A, I = 0.4 A) CE (sat) C B • High speed: t = 3 µs (max) (I = 15 A) f C Maximum Ratings
1.4. 2sd1313.pdf Size:206K _toshiba
1.5. 2sd1341p.pdf Size:61K _sanyo
1.6. 2sd1348.pdf Size:129K _sanyo
Ordering number:1245C PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB986/2SD1348 50V/4A Switching Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers, electrical unit:mm equipment. 2009B [2SB986/2SD1348] Features Adoption of FBET and MBIT processes. Low saturation voltage. High current capacity and wide ASO. JEDEC : TO-126
1.7. 2sd1396.pdf Size:42K _sanyo
1.8. 2sd1395.pdf Size:80K _sanyo
1.9. 2sd1399.pdf Size:43K _sanyo
1.10. 2sd1347.pdf Size:110K _sanyo
Ordering number:1244C PNP/NPN Epitaxial Planar Silicon Transistors 2SB985/2SD1347 Large-Current Driving Applications Applcations Package Dimensions Power supplies, relay drivers, lamp drivers, electrical unit:mm equipment. 2006A [2SB985/2SD1347] Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO. EIAJ : SC-51 B : Base (
1.11. rej03g0786 2sd1368ds-1.pdf Size:110K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re
1.12. r07ds0280ej 2sd1306-1.pdf Size:102K _renesas
Preliminary Datasheet R07DS0280EJ0300 2SD1306 (Previous: REJ03G0784-0200) Rev.3.00 Silicon NPN Epitaxial Mar 28, 2011 Application Low frequency amplifier, Muting Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 3 2. Base 3. Collector 1 2 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collect
1.13. 2sd1312.pdf Size:186K _nec
1.14. 2sb852k 2sa830s 2sd1383k 2sc1645s.pdf Size:52K _rohm
2SB852K / 2SA830S Transistors Transistors 2SD1383K / 2SC1645S (96-118-B20) (96-205-D20) 280 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are
1.15. 2sd1383k.pdf Size:141K _rohm
High-gain Amplifier Transistor (32V , 0.3A) 2SD1383K ?Features ?Dimensions (Unit : mm) 1) Darlington connection for high DC current gain. 2SD1383K 2) Built-in 4k? resistor between base and emitter. 3) Complements the 2SB852K. ?Packaging specifications Type 2SD1383K Package SMT3 hFE B Marking W ? (1)Emitter Code T146 (2)Base Basic ordering unit (pieces) 3000 (3)Collector Eac
1.16. 2sd1380.pdf Size:108K _rohm
1.17. 2sd1381f.pdf Size:89K _rohm
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F Transistors Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F Features External dimensions (Units : mm) 1) High VCEO, VCEO=80V 2SD1898 2) High IC, IC=1A (DC) 4.5+0.2 -0.1 3) Good hFE linearity 1.5+0.2 1.60.1 -0.1 4) Low VCE (sat) 5) Complements the 2SB1260 / (1) (2) (3) 0.4+0.1 -0.05 2SB1241 / 2SB1181
1.18. 2sd1385.pdf Size:37K _panasonic
Transistor 2SD1385 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). 0.85 M type package allowing easy automatic and manual inse
1.19. 2sd1330.pdf Size:84K _panasonic
Transistors 2SD1330 Silicon NPN epitaxial planar type For low-voltage output amplification Unit: mm For muting 2.50.1 6.90.1 For DC-DC converter (1.0) (1.5) (1.5) Features Low collector-emitter saturation voltage VCE(sat) R 0.9 Low ON resistance Ron R 0.7 High forward current transfer ratio hFE M type package allowing easy automatic and manual insertion as well as stan
1.20. 2sd1330 e.pdf Size:47K _panasonic
Transistor 2SD1330 Silicon NPN epitaxial planer type For low-voltage output amplification Unit: mm For muting 6.9 0.1 2.5 0.1 For DC-DC converter 1.5 1.5 R0.9 1.0 R0.9 Features Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. 0.85 M type package allowing easy automatic and manual insertion as 0.55 0.1 0.45 0.0
1.21. 2sd1302.pdf Size:41K _panasonic
Transistor 2SD1302 Silicon NPN epitaxial planer type For low-voltage output amplification Unit: mm For muting 5.0 0.2 4.0 0.2 For DC-DC converter Features Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to ba
1.22. 2sd1328 e.pdf Size:44K _panasonic
Transistor 2SD1328 Silicon NPN epitaxial planer type For low-voltage output amplification Unit: mm For muting For DC-DC converter +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features Low collector to emitter saturation voltage VCE(sat). 1 Low ON resistance Ron. 3 High foward current transfer ratio hFE. 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit C
1.23. 2sd1328.pdf Size:39K _panasonic
Transistor 2SD1328 Silicon NPN epitaxial planer type For low-voltage output amplification Unit: mm For muting For DC-DC converter +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features Low collector to emitter saturation voltage VCE(sat). 1 Low ON resistance Ron. 3 High foward current transfer ratio hFE. 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit C
1.24. 2sd1327.pdf Size:50K _panasonic
Power Transistors 2SD1327 Silicon NPN triple diffusion planar type Darlington For midium speed power switching Unit: mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Incorporating a zener diode of 60V zener voltage between col- lector and base ? 3.1 0.1 Minimized variation in the breakdown voltage Large energy handling capability High-speed switching 1.3 0.2 Full-pack package
1.25. 2sd1350.pdf Size:39K _panasonic
Transistor 2SD1350, 2SD1350A Silicon NPN triple diffusion planer type For high breakdown voltage switching Unit: mm Features High collector to base voltage VCBO. 6.9 0.1 2.5 0.1 1.5 High collector to emitter voltage VCEO. 1.5 R0.9 1.0 R0.9 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual i
1.26. 2sd1385 e.pdf Size:41K _panasonic
Transistor 2SD1385 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). 0.85 M type package allowing easy automatic and manual inse
1.27. 2sd1350 e.pdf Size:43K _panasonic
Transistor 2SD1350, 2SD1350A Silicon NPN triple diffusion planer type For high breakdown voltage switching Unit: mm Features High collector to base voltage VCBO. 6.9 0.1 2.5 0.1 1.5 High collector to emitter voltage VCEO. 1.5 R0.9 1.0 R0.9 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual i
1.28. 2sd1326.pdf Size:51K _panasonic
Power Transistors 2SD1326 Silicon NPN triple diffusion planar type Darlington Unit: mm For midium speed power switching 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Incorporating a zener diode of 60V zener voltage between col- ? 3.1 0.1 lector and base Minimized variation in the breakdown voltage Large energy handling capability High-speed switching 1.3 0.2 1.4 0.1 Full-pa
1.29. 2sd1302 e.pdf Size:45K _panasonic
Transistor 2SD1302 Silicon NPN epitaxial planer type For low-voltage output amplification Unit: mm For muting 5.0 0.2 4.0 0.2 For DC-DC converter Features Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to ba
1.30. 2sd1304 e.pdf Size:55K _panasonic
Transistor 2SD1304 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 Zener diode built in. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine packing. 3 2 Absolute Maximum Ratings (Ta=25?C) 0.1 to 0.3 Parameter Symbol Rati
1.31. 2sd1306.pdf Size:27K _hitachi
2SD1306 Silicon NPN Epitaxial ADE-208-1144 (Z) 1st. Edition Mar. 2001 Application Low frequency amplifier, Muting Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SD1306 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 5V Collector current IC 0.7 A Collecto
1.32. 2sd1368.pdf Size:24K _hitachi
2SD1368 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1002 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1368 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 6V Collector current
1.33. 2sd1366.pdf Size:31K _hitachi
2SD1366 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1366 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5V Collector current IC 1A Collector peak current iC(peak
1.34. 2sd1367.pdf Size:31K _hitachi
2SD1367 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1001 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1367 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 16 V Emitter to base voltage VEBO 6V Collector current
1.35. 2sd1376.pdf Size:33K _hitachi
2SD1376(K) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1012(K) Outline TO-126 MOD 2 3 1. Emitter ID 2. Collector 3. Base 1 6 k? 0.5 k? 2 3 (Typ) (Typ) 1 2SD1376(K) Absolute Maximum Ratings (Ta = 25C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEB
1.36. 2sd1313.pdf Size:121K _mospec
A A A
1.37. 2sd1308.pdf Size:68K _no
1.38. 2sd1309.pdf Size:63K _no
1.39. 2sd1392.pdf Size:69K _no
1.40. 2sd1311.pdf Size:31K _no
1.41. 2sd1301.pdf Size:33K _no
1.42. 2sd1397.pdf Size:26K _wingshing
NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR 2SD1397 COLOR TV HORIZONTAL OUTPUT APPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) SC-65 High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current (D
1.43. 2sd1349.pdf Size:796K _shindengen
1.44. 2sd1336.pdf Size:258K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1336 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @ IC= 5A, VCE= 4V ·High Speed Switching APPLICATIONS ·High power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Colle
1.45. 2sd1391.pdf Size:90K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1391 DESCRIPTION ·With TO-3PN package ·High speed switching ·High voltage,high reliability ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and
1.46. 2sd1378.pdf Size:234K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1378 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Low Saturation Voltage - : VCE(sat)= 0.4V(Max)@ IC= 0.5A ·Complement to Type 2SB1007 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALU
1.47. 2sd1352.pdf Size:140K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1352 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80(Min) ·Good Linearity of hFE ·Complement to Type 2SB989 APPLICATIONS ·Designed for general purpose application ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-
1.48. 2sd1390.pdf Size:229K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1390 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Reliability APPLICATIONS ·Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Volta
1.49. 2sd1308.pdf Size:64K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1308 DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2SB974 APPLICATIONS ·For audio frequency power amplifier and low speed switching industrial use PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absol
1.50. 2sd1397.pdf Size:91K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1397 DESCRIPTION ·With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·High speed switching APPLICATIONS ·Color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 E
1.51. 2sd1348.pdf Size:121K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1348 DESCRIPTION · ·With TO-126 package ·Complement to type 2SB986 ·High current capacity APPLICATIONS ·Power supplies,relay drivers,lamp drivers,electrical equipment PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBO
1.52. 2sd1396.pdf Size:91K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1396 DESCRIPTION ·With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·High speed switching APPLICATIONS ·For horizontal output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Em
1.53. 2sd1309.pdf Size:239K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1309 DESCRIPTION ·High DC Current Gain :hFE= 2000(Min) @ IC= 3A ·Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 100V (Min) ·Low Collector-Emitter Saturation Voltage- :VCE(sat)= 1.5V (Max) @ IC= 3A APPLICATIONS ·Designed for audio frequency amplifier and low-speed switchin
1.54. 2sd1313.pdf Size:75K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1313 DESCRIPTION ·With TO-3PL package ·High power dissipation ·High collector current ·High speed switching ·Low saturation voltage APPLICATIONS ·High power amplifier applications ·High power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base
1.55. 2sd1399.pdf Size:91K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1399 DESCRIPTION ·With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·High speed switching APPLICATIONS ·For horizontal output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitte
1.56. 2sd1345.pdf Size:270K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1345 DESCRIPTION ·High Switching Time ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@IC= 4A ·Wide Area of Safe Operation ·Complement to Type 2SB983 APPLICATIONS ·Inverters, converters ·Controllers for DC motor, pulse motor ·Switching power supplies ·General power applicati
1.57. 2sd1351.pdf Size:64K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1351 DESCRIPTION · ·With TO-220C package ·Complement to type 2SB988 ·Low collector saturation voltage APPLICATIONS ·For general purpose application PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITION
1.58. 2sd1311.pdf Size:253K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1311 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@IC= 3A APPLICATIONS ·Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collect
1.59. 2sd1380.pdf Size:120K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1380 DESCRIPTION · ·With TO-126 package ·Complement to type 2SB1009 ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PA
1.60. 2sd1398.pdf Size:89K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1398 DESCRIPTION ·With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·High speed switching APPLICATIONS ·For TV and CRT display horizontal output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN)
1.61. 2sd1375.pdf Size:128K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1375 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·High power dissipation APPLICATIONS ·Designed for line operated audio output amplifier ,and switching power supply drivers applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbo
1.62. 2sd1344.pdf Size:128K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1344 DESCRIPTION ·With TO-3 package ·High voltage ·Built-in damper diode APPLICATIONS ·For color TV horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL P
1.63. 2sd1376.pdf Size:113K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1376 DESCRIPTION · ·With TO-126 package ·DARLINGTON ·Complement to type 2SB1012 APPLICATIONS ·For low frequency power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER COND
1.64. 2sd1306.pdf Size:328K _kexin
SMD Type Transistors NPN Transistors 2SD1306 SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=0.7A ● Collector Emitter Voltage VCEO=15V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collec
1.65. 2sd1368.pdf Size:400K _kexin
SMD Type Transistors NPN Transistors 2SD1368 1.70 0.1 ■ Features ● Low frequency power amplifier ● Complementary to 2SB1002 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 6 Collector Current - Contin
1.66. 2sd1328.pdf Size:896K _kexin
SMD Type Transistors NPN Transistors 2SD1328 SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=0.5A ● Collector Emitter Voltage VCEO=20V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collec
1.67. 2sd1366.pdf Size:883K _kexin
SMD Type Transistors NPN Transistors 2SD1366 1.70 0.1 ■ Features ● Low frequency power amplifier ● Complementary to 2SB1000 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 5 Collector Current - Continu
1.68. 2sd1367.pdf Size:865K _kexin
SMD Type Transistors NPN Transistors 2SD1367 ■ Features 1.70 0.1 ● Low frequency power amplifier ● Complementary to 2SB1001 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 16 V Emitter - Base Voltage VEBO 6 Collector Current - Continuo
Datasheet: 2SD1292 , 2SD1293 , 2SD1294 , 2SD1295 , 2SD1296 , 2SD1297 , 2SD1298 , 2SD1299 , 8550 , 2SD130 , 2SD1300 , 2SD1301 , 2SD1302 , 2SD1303 , 2SD1304 , 2SD1305 , 2SD1306 .
