2SD13 Specs and Replacement
Type Designator: 2SD13
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO36
2SD13 Substitution
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2SD13 datasheet
2SD1314 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1314 High Power Switching Applications Unit mm Motor Control Applications High DC current gain hFE = 100 (min) (V = 5 V, I = 15 A) CE C Low saturation voltage V = 2 V (max) (I = 15 A, I = 0.4 A) CE (sat) C B High speed t = 3 s (max) (I = 15 A) f C Maximum Ratings ... See More ⇒
Ordering number 1245C PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB986/2SD1348 50V/4A Switching Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers, electrical unit mm equipment. 2009B [2SB986/2SD1348] Features Adoption of FBET and MBIT processes. Low saturation voltage. High current capacity and wide ASO. JEDEC ... See More ⇒
Ordering number 1244C PNP/NPN Epitaxial Planar Silicon Transistors 2SB985/2SD1347 Large-Current Driving Applications Applcations Package Dimensions Power supplies, relay drivers, lamp drivers, electrical unit mm equipment. 2006A [2SB985/2SD1347] Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO. EIAJ SC-51 B ... See More ⇒
Preliminary Datasheet R07DS0280EJ0300 2SD1306 (Previous REJ03G0784-0200) Rev.3.00 Silicon NPN Epitaxial Mar 28, 2011 Application Low frequency amplifier, Muting Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 1. Emitter 3 2. Base 3. Collector 1 2 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Col... See More ⇒
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
2sb852k 2sa830s 2sd1383k 2sc1645s.pdf 
2SB852K / 2SA830S Transistors Transistors 2SD1383K / 2SC1645S (96-118-B20) (96-205-D20) 280 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document a... See More ⇒
2SD1383K Datasheet High-gain Amplifer Transistor (32V, 0.3A) lOutline l SOT-346 Parameter Value SC-59 VCES 32V IC 0.3A R 4k SMT3 lFeatures lInner circuit l l 1)Darlington connection for high DC current gain. 2)Built-in 4k resistor between base and emitter. 3)Complements the 2SB852K. lApplication l HIGH GAIN AMPLIFIER ... See More ⇒
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F Transistors Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F Features External dimensions (Units mm) 1) High VCEO, VCEO=80V 2SD1898 2) High IC, IC=1A (DC) 4.5+0.2 -0.1 3) Good hFE linearity 1.5+0.2 1.6 0.1 -0.1 4) Low VCE (sat) 5) Complements the 2SB1260 / (1) (2) (3) 0.4+0.1 -0.05 2SB1241 / 2SB... See More ⇒
Transistor 2SD1385 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). 0.85 M type package allowing easy automatic and manual... See More ⇒
Transistor 2SD1302 Silicon NPN epitaxial planer type For low-voltage output amplification Unit mm For muting 5.0 0.2 4.0 0.2 For DC-DC converter Features Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Colle... See More ⇒
Transistor 2SD1385 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). 0.85 M type package allowing easy automatic and manual... See More ⇒
Transistor 2SD1302 Silicon NPN epitaxial planer type For low-voltage output amplification Unit mm For muting 5.0 0.2 4.0 0.2 For DC-DC converter Features Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Colle... See More ⇒
Power Transistors 2SD1326 Silicon NPN triple diffusion planar type Darlington Unit mm For midium speed power switching 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Incorporating a zener diode of 60V zener voltage between col- 3.1 0.1 lector and base Minimized variation in the breakdown voltage Large energy handling capability High-speed switching 1.3 0.2 1.4 0.... See More ⇒
Power Transistors 2SD1327 Silicon NPN triple diffusion planar type Darlington For midium speed power switching Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Incorporating a zener diode of 60V zener voltage between col- lector and base 3.1 0.1 Minimized variation in the breakdown voltage Large energy handling capability High-speed switching 1.3 0.2 Full-pa... See More ⇒
Transistor 2SD1328 Silicon NPN epitaxial planer type For low-voltage output amplification Unit mm For muting For DC-DC converter +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features Low collector to emitter saturation voltage VCE(sat). 1 Low ON resistance Ron. 3 High foward current transfer ratio hFE. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratin... See More ⇒
Transistor 2SD1330 Silicon NPN epitaxial planer type For low-voltage output amplification Unit mm For muting 6.9 0.1 2.5 0.1 For DC-DC converter 1.5 1.5 R0.9 1.0 R0.9 Features Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. 0.85 M type package allowing easy automatic and manual insertion as 0.55 0.1 0.4... See More ⇒
Transistor 2SD1304 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 Zener diode built in. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine packing. 3 2 Absolute Maximum Ratings (Ta=25 C) 0.1 to 0.3 Parameter S... See More ⇒
Transistor 2SD1350, 2SD1350A Silicon NPN triple diffusion planer type For high breakdown voltage switching Unit mm Features High collector to base voltage VCBO. 6.9 0.1 2.5 0.1 1.5 High collector to emitter voltage VCEO. 1.5 R0.9 1.0 R0.9 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and man... See More ⇒
Transistor 2SD1350, 2SD1350A Silicon NPN triple diffusion planer type For high breakdown voltage switching Unit mm Features High collector to base voltage VCBO. 6.9 0.1 2.5 0.1 1.5 High collector to emitter voltage VCEO. 1.5 R0.9 1.0 R0.9 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and man... See More ⇒
Transistor 2SD1328 Silicon NPN epitaxial planer type For low-voltage output amplification Unit mm For muting For DC-DC converter +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features Low collector to emitter saturation voltage VCE(sat). 1 Low ON resistance Ron. 3 High foward current transfer ratio hFE. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratin... See More ⇒
Transistors 2SD1330 Silicon NPN epitaxial planar type For low-voltage output amplification Unit mm For muting 2.5 0.1 6.9 0.1 For DC-DC converter (1.0) (1.5) (1.5) Features Low collector-emitter saturation voltage VCE(sat) R 0.9 Low ON resistance Ron R 0.7 High forward current transfer ratio hFE M type package allowing easy automatic and manual insertion a... See More ⇒
2SD1306 Silicon NPN Epitaxial ADE-208-1144 (Z) 1st. Edition Mar. 2001 Application Low frequency amplifier, Muting Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SD1306 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 5V Collector current IC 0.7 A Coll... See More ⇒
2SD1367 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1001 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1367 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 16 V Emitter to base voltage VEBO 6V Collector ... See More ⇒
2SD1368 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1002 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1368 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 6V Collector... See More ⇒
2SD1376(K) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1012(K) Outline TO-126 MOD 2 3 1. Emitter ID 2. Collector 3. Base 1 6 k 0.5 k 2 3 (Typ) (Typ) 1 2SD1376(K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base vol... See More ⇒
2SD1366 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1366 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5V Collector current IC 1A Collector peak current iC(... See More ⇒
NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR 2SD1397 COLOR TV HORIZONTAL OUTPUT APPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) SC-65 High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current... See More ⇒
SMD Type Transistors NPN Transistors 2SD1306 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=0.7A Collector Emitter Voltage VCEO=15V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collec... See More ⇒
SMD Type Transistors NPN Transistors 2SD1367 Features 1.70 0.1 Low frequency power amplifier Complementary to 2SB1001 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 16 V Emitter - Base Voltage VEBO 6 Collector Current - Continuo... See More ⇒
SMD Type Transistors NPN Transistors 2SD1368 1.70 0.1 Features Low frequency power amplifier Complementary to 2SB1002 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 6 Collector Current - Contin... See More ⇒
SMD Type Transistors NPN Transistors 2SD1328 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=20V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collec... See More ⇒
SMD Type Transistors NPN Transistors 2SD1366 1.70 0.1 Features Low frequency power amplifier Complementary to 2SB1000 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 5 Collector Current - Continu... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1393 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 0.8A FE C Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose am... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1300 DESCRIPTION High Collector-Base Breakdown Voltage- V = 1500V (Min.) (BR)CBO Low Collector Saturation Voltage- High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =... See More ⇒
isc Silicon NPN Power Transistor 2SD1345 DESCRIPTION High Switching Time Low Collector Saturation Voltage V = 0.4V(Max)@I = 4A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB983 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Inverters, converters Controllers for DC motor, pulse motor Switching power sup... See More ⇒
isc Silicon NPN Power Transistor 2SD133 DESCRIPTION Collector Current I = 7A C Collector-Emitter BreakdownVoltage- V = 120V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volt... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1370 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 3A, V = 3V FE C CE Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliab... See More ⇒
isc Silicon NPN Power Transistor 2SD1371 DESCRIPTION High Voltage High Speed Switching High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching mode power supply and electronic ballast applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1361 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 250V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 4A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 2A, V = 2V FE C CE Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliab... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1373 DESCRIPTION High Collector-Base Voltage- V = 300V(Min.) CBO Good Linearity of h FE High Speed Switching Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage,high-speed,power switching regulators and ge... See More ⇒
isc Silicon NPN Power Transistor 2SD1398 DESCRIPTION High Breakdown Voltage High Switching Speed Built-in damper diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base V... See More ⇒
isc Silicon NPN Power Transistor 2SD1311 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Low Collector Saturation Voltage- V = 1.5V(Max.)@I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S... See More ⇒
isc Silicon NPN Power Transistor 2SD1344 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1360 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 4A CE(sat) C High DC Current Gain h = 600(Min) @ I = 2A, V = 2V FE C CE Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliabl... See More ⇒
isc Silicon NPN Power Transistor 2SD1342 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage ... See More ⇒
isc Silicon NPN Power Transistor 2SD1351 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Collector Power Dissipation- P = 30W@ T = 25 C C Low Collector Saturation Voltage- V = 1.0V(Max)@ (I = 2A, I = 0.2A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose... See More ⇒
isc Silicon NPN Power Transistor 2SD1399 DESCRIPTION High Breakdown Voltage V = 1500V (Min) CBO High Switching Speed Built-in damper diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage ... See More ⇒
isc Silicon NPN Power Transistor 2SD1313 DESCRIPTION High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 350V(Min) (BR)CEO High Speed Switching Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power amplifier applications. High power switching applications. ABSOLUTE... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1394 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = 1.5A FE C Low Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amp... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1301 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Collector Saturation Voltage- V = 3.0V(Max.)@ I = 1A CE(sat) C Wide area of safe operation Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed f... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1377 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = 4A FE C Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amp... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1357 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 3A, V = 3V FE C CE Complement to Type 2SB997 Minimum Lot-to-Lot variations for robust device performance and r... See More ⇒
isc Silicon NPN Power Transistor 2SD1378 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Low Saturation Voltage - V = 0.4V(Max)@ I = 0.5A CE(sat) C Complement to Type 2SB1007 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RAT... See More ⇒
isc Silicon NPN Power Transistor 2SD1348 DESCRIPTION High Collector Current-I = 4.0A C Low Saturation Voltage - V = 0.5V(Max)@ I = 2A, I = 0.1A CE(sat) C B Good Linearity of h FE Complement to Type 2SB986 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power supplies, relay drivers, lamp drivers, electrical... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1374 DESCRIPTION High Collector-Base Voltage- V = 300V(Min.) CBO Good Linearity of h FE High Speed Switching Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage,high-speed,power switching regulators and ge... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1375 DESCRIPTION High Collector-Base Voltage- V = 300V(Min.) CBO Good Linearity of h FE High Speed Switching Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage,high-speed,power switching regulators and ge... See More ⇒
isc Silicon NPN Power Transistor 2SD1338 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1386 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = 4A FE C Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1355 DESCRIPTION Low Collector Saturation Voltage V = 2.0V(Max)@ I = 4A CE(sat) C Collector-Emitter Breakdown Voltage- V = 100V (Min) (BR)CEO Complement to Type 2SB995 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Recommended fo... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1372 DESCRIPTION High Collector-Base Voltage- V = 300V(Min.) CBO High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage,high-speed,power switching regulators,converters,inverters,motor control system. ABSOLUTE MAXIMUM RAT... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD1309 DESCRIPTION High DC Current Gain h = 2000(Min) @ I = 3A FE C Collector-Emitter Sustaining Voltage- V = 100V (Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.5V (Max) @ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio freq... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD130 DESCRIPTION DC Current Gain -h = 15(Min)@ I = 3A FE C Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR) CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =... See More ⇒
isc Silicon NPN Power Transistor 2SD1390 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1307 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 350V(Min) CEO(SUS) High DC current gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver Absolute maximum ratings(Ta=25 ) SYMBOL PARAMET... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1362 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector Power Dissipation- P = 40W@ T = 25 C C Low Collector Saturation Voltage- V = 0.5V(Max)@ I = 4A CE(sat) C Complement to Type 2SB992 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLI... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1365 DESCRIPTION High Collector-Base Voltage V = 800V(Min) (BR)CBO Low Collector Saturation Voltage- V = 1.5V(Max)@ I = 2A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Motor control systems. Power ampli... See More ⇒
isc Silicon NPN Power Transistor 2SD1340 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1358 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 3A, V = 3V FE C CE Complement to Type 2SB998 Minimum Lot-to-Lot variations for robust device performance and re... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1314 DESCRIPTION High DC Current Gain h = 100(Min) @ I = 15A FE C Collector-Emitter Sustaining Voltage- V = 450V (Min) CEO(SUS) Fast Switching Speed Low Collector-Emitter Saturation Voltage- V = 2.0V (Max) @ I = 15A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable o... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1395 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 2.5A FE C Low Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amp... See More ⇒
isc Silicon NPN Power Transistor 2SD1397 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage ... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD1376 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = 1A FE C Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- Complement to Type 2SB1012 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency powe... See More ⇒
isc Silicon NPN Power Transistor 2SD1391 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD1308 DESCRIPTION High DC Current Gain h = 2000(Min) @ I = 2A FE C Collector-Emitter Sustaining Voltage- V = 100V (Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.5V (Max) @ I = 2A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio freq... See More ⇒
isc Silicon NPN Power Transistor 2SD1380 DESCRIPTION High Collector Current -I = 2A C Collector-Emitter Breakdown Voltage- V = 32V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Complement to Type 2SB1009 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier application... See More ⇒
isc Silicon NPN Power Transistor 2SD1352 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB989 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose application ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD1336 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain h = 1500(Min) @ I = 5A, V = 4V FE C CE High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
isc Silicon NPN Power Transistor 2SD1396 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage ... See More ⇒
Detailed specifications: 2SD1292, 2SD1293M, 2SD1294, 2SD1295, 2SD1296, 2SD1297, 2SD1298, 2SD1299, 13007, 2SD130, 2SD1300, 2SD1301, 2SD1302, 2SD1303, 2SD1304, 2SD1305, 2SD1306
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