2SD130 Todos los transistores

 ..1. Size:181K  inchange semiconductor
 2sd130.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD130 DESCRIPTION DC Current Gain -h = 15(Min)@ I = 3A FE C Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR) CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =

 0.1. Size:102K  renesas
 r07ds0280ej 2sd1306-1.pdf

Preliminary Datasheet R07DS0280EJ0300 2SD1306 (Previous REJ03G0784-0200) Rev.3.00 Silicon NPN Epitaxial Mar 28, 2011 Application Low frequency amplifier, Muting Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 1. Emitter 3 2. Base 3. Collector 1 2 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Col

 0.2. Size:45K  panasonic
 2sd1302 e.pdf

Transistor 2SD1302 Silicon NPN epitaxial planer type For low-voltage output amplification Unit mm For muting 5.0 0.2 4.0 0.2 For DC-DC converter Features Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Colle

 0.3. Size:41K  panasonic
 2sd1302.pdf

Transistor 2SD1302 Silicon NPN epitaxial planer type For low-voltage output amplification Unit mm For muting 5.0 0.2 4.0 0.2 For DC-DC converter Features Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Colle

 0.4. Size:55K  panasonic
 2sd1304 e.pdf

Transistor 2SD1304 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 Zener diode built in. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine packing. 3 2 Absolute Maximum Ratings (Ta=25 C) 0.1 to 0.3 Parameter S

 0.5. Size:27K  hitachi
 2sd1306.pdf

2SD1306 Silicon NPN Epitaxial ADE-208-1144 (Z) 1st. Edition Mar. 2001 Application Low frequency amplifier, Muting Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SD1306 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 5V Collector current IC 0.7 A Coll

 0.6. Size:33K  no
 2sd1301.pdf

 0.7. Size:63K  no
 2sd1309.pdf

 0.8. Size:68K  no
 2sd1308.pdf

 0.9. Size:328K  kexin
 2sd1306.pdf

SMD Type Transistors NPN Transistors 2SD1306 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=0.7A Collector Emitter Voltage VCEO=15V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collec

 0.10. Size:193K  inchange semiconductor
 2sd1300.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1300 DESCRIPTION High Collector-Base Breakdown Voltage- V = 1500V (Min.) (BR)CBO Low Collector Saturation Voltage- High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =

 0.11. Size:196K  inchange semiconductor
 2sd1301.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1301 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Collector Saturation Voltage- V = 3.0V(Max.)@ I = 1A CE(sat) C Wide area of safe operation Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed f

 0.12. Size:216K  inchange semiconductor
 2sd1309.pdf

isc Silicon NPN Darlington Power Transistor 2SD1309 DESCRIPTION High DC Current Gain h = 2000(Min) @ I = 3A FE C Collector-Emitter Sustaining Voltage- V = 100V (Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.5V (Max) @ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio freq

 0.13. Size:186K  inchange semiconductor
 2sd1307.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1307 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 350V(Min) CEO(SUS) High DC current gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver Absolute maximum ratings(Ta=25 ) SYMBOL PARAMET

 0.14. Size:215K  inchange semiconductor
 2sd1308.pdf

isc Silicon NPN Darlington Power Transistor 2SD1308 DESCRIPTION High DC Current Gain h = 2000(Min) @ I = 2A FE C Collector-Emitter Sustaining Voltage- V = 100V (Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.5V (Max) @ I = 2A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio freq