2SD130 Specs and Replacement
Type Designator: 2SD130
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO66
- BJT ⓘ Cross-Reference Search
2SD130 datasheet
..1. Size:181K inchange semiconductor
2sd130.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD130 DESCRIPTION DC Current Gain -h = 15(Min)@ I = 3A FE C Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR) CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =... See More ⇒
0.1. Size:102K renesas
r07ds0280ej 2sd1306-1.pdf
Preliminary Datasheet R07DS0280EJ0300 2SD1306 (Previous REJ03G0784-0200) Rev.3.00 Silicon NPN Epitaxial Mar 28, 2011 Application Low frequency amplifier, Muting Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 1. Emitter 3 2. Base 3. Collector 1 2 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Col... See More ⇒
0.2. Size:45K panasonic
2sd1302 e.pdf
Transistor 2SD1302 Silicon NPN epitaxial planer type For low-voltage output amplification Unit mm For muting 5.0 0.2 4.0 0.2 For DC-DC converter Features Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Colle... See More ⇒
0.3. Size:41K panasonic
2sd1302.pdf
Transistor 2SD1302 Silicon NPN epitaxial planer type For low-voltage output amplification Unit mm For muting 5.0 0.2 4.0 0.2 For DC-DC converter Features Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Colle... See More ⇒
0.4. Size:55K panasonic
2sd1304 e.pdf
Transistor 2SD1304 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 Zener diode built in. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine packing. 3 2 Absolute Maximum Ratings (Ta=25 C) 0.1 to 0.3 Parameter S... See More ⇒
0.5. Size:27K hitachi
2sd1306.pdf
2SD1306 Silicon NPN Epitaxial ADE-208-1144 (Z) 1st. Edition Mar. 2001 Application Low frequency amplifier, Muting Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SD1306 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 5V Collector current IC 0.7 A Coll... See More ⇒
0.9. Size:328K kexin
2sd1306.pdf
SMD Type Transistors NPN Transistors 2SD1306 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=0.7A Collector Emitter Voltage VCEO=15V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collec... See More ⇒
0.10. Size:193K inchange semiconductor
2sd1300.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1300 DESCRIPTION High Collector-Base Breakdown Voltage- V = 1500V (Min.) (BR)CBO Low Collector Saturation Voltage- High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =... See More ⇒
0.11. Size:196K inchange semiconductor
2sd1301.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1301 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Collector Saturation Voltage- V = 3.0V(Max.)@ I = 1A CE(sat) C Wide area of safe operation Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed f... See More ⇒
0.12. Size:216K inchange semiconductor
2sd1309.pdf
isc Silicon NPN Darlington Power Transistor 2SD1309 DESCRIPTION High DC Current Gain h = 2000(Min) @ I = 3A FE C Collector-Emitter Sustaining Voltage- V = 100V (Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.5V (Max) @ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio freq... See More ⇒
0.13. Size:186K inchange semiconductor
2sd1307.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1307 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 350V(Min) CEO(SUS) High DC current gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver Absolute maximum ratings(Ta=25 ) SYMBOL PARAMET... See More ⇒
0.14. Size:215K inchange semiconductor
2sd1308.pdf
isc Silicon NPN Darlington Power Transistor 2SD1308 DESCRIPTION High DC Current Gain h = 2000(Min) @ I = 2A FE C Collector-Emitter Sustaining Voltage- V = 100V (Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.5V (Max) @ I = 2A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio freq... See More ⇒
Detailed specifications: 2SD1293M, 2SD1294, 2SD1295, 2SD1296, 2SD1297, 2SD1298, 2SD1299, 2SD13, BD140, 2SD1300, 2SD1301, 2SD1302, 2SD1303, 2SD1304, 2SD1305, 2SD1306, 2SD1307
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