2SD1308 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon NPN Darlington Power Transistor 2SD1308DESCRIPTIONHigh DC Current Gain:h = 2000(Min) @ I = 2AFE CCollector-Emitter Sustaining Voltage-:V = 100V (Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-:V = 1.5V (Max) @ I = 2ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio freq

Preliminary Datasheet R07DS0280EJ03002SD1306 (Previous: REJ03G0784-0200)Rev.3.00Silicon NPN Epitaxial Mar 28, 2011Application Low frequency amplifier, Muting Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)1. Emitter32. Base3. Collector12Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCol

Transistor2SD1302Silicon NPN epitaxial planer typeFor low-voltage output amplificationUnit: mmFor muting5.0 0.2 4.0 0.2For DC-DC converterFeaturesLow collector to emitter saturation voltage VCE(sat).Low ON resistance Ron.High foward current transfer ratio hFE.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Colle

Transistor2SD1302Silicon NPN epitaxial planer typeFor low-voltage output amplificationUnit: mmFor muting5.0 0.2 4.0 0.2For DC-DC converterFeaturesLow collector to emitter saturation voltage VCE(sat).Low ON resistance Ron.High foward current transfer ratio hFE.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Colle

Transistor2SD1304Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm+0.22.8 0.3+0.25Features0.65 0.15 1.5 0.05 0.65 0.15Zener diode built in.Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazinepacking.32Absolute Maximum Ratings (Ta=25C)0.1 to 0.3Parameter S

2SD1306Silicon NPN EpitaxialADE-208-1144 (Z)1st. EditionMar. 2001ApplicationLow frequency amplifier, MutingOutlineMPAK311. Emitter2. Base23. Collector2SD1306Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 15 VEmitter to base voltage VEBO 5VCollector current IC 0.7 AColl

SMD Type TransistorsNPN Transistors2SD1306SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=0.7A Collector Emitter Voltage VCEO=15V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collec

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1300DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 1500V (Min.)(BR)CBOLow Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1301DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 3.0V(Max.)@ I = 1ACE(sat) CWide area of safe operationBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned f

isc Silicon NPN Darlington Power Transistor 2SD1309DESCRIPTIONHigh DC Current Gain:h = 2000(Min) @ I = 3AFE CCollector-Emitter Sustaining Voltage-:V = 100V (Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-:V = 1.5V (Max) @ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio freq

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD130DESCRIPTIONDC Current Gain -h = 15(Min)@ I = 3AFE CCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR) CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1307DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 350V(Min)CEO(SUS)High DC current gainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverAbsolute maximum ratings(Ta=25)SYMBOL PARAMET