2SD1313 Todos los transistores

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isc Silicon NPN Power Transistor 2SD1313 DESCRIPTION High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 350V(Min) (BR)CEO High Speed Switching Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power amplifier applications. High power switching applications. ABSOLUTE

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2SD1314 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1314 High Power Switching Applications Unit mm Motor Control Applications High DC current gain hFE = 100 (min) (V = 5 V, I = 15 A) CE C Low saturation voltage V = 2 V (max) (I = 15 A, I = 0.4 A) CE (sat) C B High speed t = 3 s (max) (I = 15 A) f C Maximum Ratings

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isc Silicon NPN Power Transistor 2SD1311 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Low Collector Saturation Voltage- V = 1.5V(Max.)@I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

 8.5. Size:187K  inchange semiconductor
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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1314 DESCRIPTION High DC Current Gain h = 100(Min) @ I = 15A FE C Collector-Emitter Sustaining Voltage- V = 450V (Min) CEO(SUS) Fast Switching Speed Low Collector-Emitter Saturation Voltage- V = 2.0V (Max) @ I = 15A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable o