2SD1313 Specs and Replacement
Type Designator: 2SD1313
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 6 MHz
Collector Capacitance (Cc): 170 pF
Forward Current Transfer Ratio (hFE), MIN: 6
Package: TO264
2SD1313 Substitution
- BJT ⓘ Cross-Reference Search
2SD1313 datasheet
isc Silicon NPN Power Transistor 2SD1313 DESCRIPTION High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 350V(Min) (BR)CEO High Speed Switching Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power amplifier applications. High power switching applications. ABSOLUTE... See More ⇒
2SD1314 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1314 High Power Switching Applications Unit mm Motor Control Applications High DC current gain hFE = 100 (min) (V = 5 V, I = 15 A) CE C Low saturation voltage V = 2 V (max) (I = 15 A, I = 0.4 A) CE (sat) C B High speed t = 3 s (max) (I = 15 A) f C Maximum Ratings ... See More ⇒
Detailed specifications: 2SD1306 , 2SD1307 , 2SD1308 , 2SD1309 , 2SD131 , 2SD1310 , 2SD1311 , 2SD1312 , BC327 , 2SD1314 , 2SD1315 , 2SD1316 , 2SD1317 , 2SD1318 , 2SD1319 , 2SD131D , 2SD132 .
History: 2SC1416A
Keywords - 2SD1313 pdf specs
2SD1313 cross reference
2SD1313 equivalent finder
2SD1313 pdf lookup
2SD1313 substitution
2SD1313 replacement
