All Transistors. 2SD1313 Datasheet

 

2SD1313 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1313

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 200 W

Maximum Collector-Base Voltage |Vcb|: 800 V

Maximum Collector-Emitter Voltage |Vce|: 350 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 25 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 6 MHz

Collector Capacitance (Cc): 170 pF

Forward Current Transfer Ratio (hFE), MIN: 6

Noise Figure, dB: -

Package: TO264

2SD1313 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1313 Datasheet (PDF)

1.1. 2sd1313.pdf Size:206K _toshiba

2SD1313
2SD1313



1.2. 2sd1313.pdf Size:121K _mospec

2SD1313
2SD1313

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 1.3. 2sd1313.pdf Size:75K _inchange_semiconductor

2SD1313
2SD1313

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1313 DESCRIPTION ·With TO-3PL package ·High power dissipation ·High collector current ·High speed switching ·Low saturation voltage APPLICATIONS ·High power amplifier applications ·High power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base

Datasheet: 2N3181 , 2N3182 , 2N3183 , 2N3184 , 2N3185 , 2N3186 , 2N3187 , 2N3188 , BC547B , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 .

 
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