2SD1325 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Power Transistors 2SD1326 Silicon NPN triple diffusion planar type Darlington Unit mm For midium speed power switching 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Incorporating a zener diode of 60V zener voltage between col- 3.1 0.1 lector and base Minimized variation in the breakdown voltage Large energy handling capability High-speed switching 1.3 0.2 1.4 0.

Power Transistors 2SD1327 Silicon NPN triple diffusion planar type Darlington For midium speed power switching Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Incorporating a zener diode of 60V zener voltage between col- lector and base 3.1 0.1 Minimized variation in the breakdown voltage Large energy handling capability High-speed switching 1.3 0.2 Full-pa

Transistor 2SD1328 Silicon NPN epitaxial planer type For low-voltage output amplification Unit mm For muting For DC-DC converter +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features Low collector to emitter saturation voltage VCE(sat). 1 Low ON resistance Ron. 3 High foward current transfer ratio hFE. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratin

Transistor 2SD1328 Silicon NPN epitaxial planer type For low-voltage output amplification Unit mm For muting For DC-DC converter +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features Low collector to emitter saturation voltage VCE(sat). 1 Low ON resistance Ron. 3 High foward current transfer ratio hFE. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratin

SMD Type Transistors NPN Transistors 2SD1328 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=20V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collec