2SD1336. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SD1336 datasheet

..1. Size:212K inchange semiconductor
2sd1336.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1336 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain h = 1500(Min) @ I = 5A, V = 4V FE C CE High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )

8.1. Size:47K panasonic
2sd1330 e.pdf pdf_icon

Transistor 2SD1330 Silicon NPN epitaxial planer type For low-voltage output amplification Unit mm For muting 6.9 0.1 2.5 0.1 For DC-DC converter 1.5 1.5 R0.9 1.0 R0.9 Features Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. 0.85 M type package allowing easy automatic and manual insertion as 0.55 0.1 0.4

8.2. Size:84K panasonic
2sd1330.pdf pdf_icon

Transistors 2SD1330 Silicon NPN epitaxial planar type For low-voltage output amplification Unit mm For muting 2.5 0.1 6.9 0.1 For DC-DC converter (1.0) (1.5) (1.5) Features Low collector-emitter saturation voltage VCE(sat) R 0.9 Low ON resistance Ron R 0.7 High forward current transfer ratio hFE M type package allowing easy automatic and manual insertion a

8.3. Size:209K inchange semiconductor
2sd133.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD133 DESCRIPTION Collector Current I = 7A C Collector-Emitter BreakdownVoltage- V = 120V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volt