Биполярный транзистор 2SD1336 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD1336
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 200 V
Макcимальный постоянный ток коллектора (Ic): 6 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 3000
Корпус транзистора: TO218
2SD1336 Datasheet (PDF)
2sd1336.pdf
isc Silicon NPN Darlington Power Transistor 2SD1336DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain: h = 1500(Min) @ I = 5A, V = 4VFE C CEHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
2sd1330 e.pdf
Transistor2SD1330Silicon NPN epitaxial planer typeFor low-voltage output amplificationUnit: mmFor muting6.9 0.1 2.5 0.1For DC-DC converter1.51.5 R0.9 1.0R0.9FeaturesLow collector to emitter saturation voltage VCE(sat).Low ON resistance Ron.High foward current transfer ratio hFE.0.85M type package allowing easy automatic and manual insertion as0.55 0.1 0.4
2sd1330.pdf
Transistors2SD1330Silicon NPN epitaxial planar typeFor low-voltage output amplificationUnit: mmFor muting2.50.16.90.1For DC-DC converter(1.0)(1.5)(1.5) Features Low collector-emitter saturation voltage VCE(sat) R 0.9 Low ON resistance Ron R 0.7 High forward current transfer ratio hFE M type package allowing easy automatic and manual insertion a
2sd133.pdf
isc Silicon NPN Power Transistor 2SD133DESCRIPTIONCollector Current: I = 7ACCollector-Emitter BreakdownVoltage-: V = 120V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volt
2sd1338.pdf
isc Silicon NPN Power Transistor 2SD1338DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
