2SD134 Todos los transistores

 0.1. Size:129K  sanyo
 2sd1348.pdf

Ordering number 1245C PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB986/2SD1348 50V/4A Switching Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers, electrical unit mm equipment. 2009B [2SB986/2SD1348] Features Adoption of FBET and MBIT processes. Low saturation voltage. High current capacity and wide ASO. JEDEC

 0.2. Size:110K  sanyo
 2sd1347.pdf

Ordering number 1244C PNP/NPN Epitaxial Planar Silicon Transistors 2SB985/2SD1347 Large-Current Driving Applications Applcations Package Dimensions Power supplies, relay drivers, lamp drivers, electrical unit mm equipment. 2006A [2SB985/2SD1347] Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO. EIAJ SC-51 B

 0.3. Size:61K  sanyo
 2sd1341p.pdf

 0.4. Size:796K  shindengen
 2sd1349.pdf

 0.5. Size:210K  inchange semiconductor
 2sd1345.pdf

isc Silicon NPN Power Transistor 2SD1345 DESCRIPTION High Switching Time Low Collector Saturation Voltage V = 0.4V(Max)@I = 4A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB983 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Inverters, converters Controllers for DC motor, pulse motor Switching power sup

 0.6. Size:205K  inchange semiconductor
 2sd1344.pdf

isc Silicon NPN Power Transistor 2SD1344 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

 0.7. Size:206K  inchange semiconductor
 2sd1342.pdf

isc Silicon NPN Power Transistor 2SD1342 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

 0.8. Size:213K  inchange semiconductor
 2sd1348.pdf

isc Silicon NPN Power Transistor 2SD1348 DESCRIPTION High Collector Current-I = 4.0A C Low Saturation Voltage - V = 0.5V(Max)@ I = 2A, I = 0.1A CE(sat) C B Good Linearity of h FE Complement to Type 2SB986 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power supplies, relay drivers, lamp drivers, electrical

 0.9. Size:205K  inchange semiconductor
 2sd1340.pdf

isc Silicon NPN Power Transistor 2SD1340 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage