2SD134 Specs and Replacement
Type Designator: 2SD134
Material of Transistor: Ge
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.03 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.005 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO18
- BJT ⓘ Cross-Reference Search
2SD134 datasheet
0.1. Size:129K sanyo
2sd1348.pdf 
Ordering number 1245C PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB986/2SD1348 50V/4A Switching Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers, electrical unit mm equipment. 2009B [2SB986/2SD1348] Features Adoption of FBET and MBIT processes. Low saturation voltage. High current capacity and wide ASO. JEDEC ... See More ⇒
0.2. Size:110K sanyo
2sd1347.pdf
Ordering number 1244C PNP/NPN Epitaxial Planar Silicon Transistors 2SB985/2SD1347 Large-Current Driving Applications Applcations Package Dimensions Power supplies, relay drivers, lamp drivers, electrical unit mm equipment. 2006A [2SB985/2SD1347] Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO. EIAJ SC-51 B ... See More ⇒
0.5. Size:210K inchange semiconductor
2sd1345.pdf
isc Silicon NPN Power Transistor 2SD1345 DESCRIPTION High Switching Time Low Collector Saturation Voltage V = 0.4V(Max)@I = 4A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB983 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Inverters, converters Controllers for DC motor, pulse motor Switching power sup... See More ⇒
0.6. Size:205K inchange semiconductor
2sd1344.pdf
isc Silicon NPN Power Transistor 2SD1344 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage ... See More ⇒
0.7. Size:206K inchange semiconductor
2sd1342.pdf
isc Silicon NPN Power Transistor 2SD1342 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage ... See More ⇒
0.8. Size:213K inchange semiconductor
2sd1348.pdf
isc Silicon NPN Power Transistor 2SD1348 DESCRIPTION High Collector Current-I = 4.0A C Low Saturation Voltage - V = 0.5V(Max)@ I = 2A, I = 0.1A CE(sat) C B Good Linearity of h FE Complement to Type 2SB986 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power supplies, relay drivers, lamp drivers, electrical... See More ⇒
0.9. Size:205K inchange semiconductor
2sd1340.pdf
isc Silicon NPN Power Transistor 2SD1340 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage ... See More ⇒
Detailed specifications: 2SD1333
, 2SD1334
, 2SD1335
, 2SD1336
, 2SD1336A
, 2SD1337
, 2SD1338
, 2SD1339
, D209L
, 2SD1340
, 2SD1341
, 2SD1342
, 2SD1343
, 2SD1344
, 2SD1345
, 2SD1346
, 2SD1347
.
History: ZT187
| 2N637A
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