2SD1340
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1340
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50
W
Tensión colector-base (Vcb): 1500
V
Corriente del colector DC máxima (Ic): 3.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar 2SD1340
2SD1340
Datasheet (PDF)
..1. Size:205K inchange semiconductor
2sd1340.pdf 
isc Silicon NPN Power Transistor 2SD1340DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
8.1. Size:129K sanyo
2sd1348.pdf
Ordering number:1245CPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB986/2SD134850V/4A Switching ApplicationsApplications Package Dimensions Power supplies, relay drivers, lamp drivers, electricalunit:mmequipment.2009B[2SB986/2SD1348]Features Adoption of FBET and MBIT processes. Low saturation voltage. High current capacity and wide ASO.JEDEC :
8.2. Size:110K sanyo
2sd1347.pdf
Ordering number:1244CPNP/NPN Epitaxial Planar Silicon Transistors2SB985/2SD1347Large-Current Driving ApplicationsApplcations Package Dimensions Power supplies, relay drivers, lamp drivers, electricalunit:mmequipment.2006A[2SB985/2SD1347]Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO.EIAJ : SC-51 B :
8.5. Size:210K inchange semiconductor
2sd1345.pdf
isc Silicon NPN Power Transistor 2SD1345DESCRIPTIONHigh Switching TimeLow Collector Saturation Voltage: V = 0.4V(Max)@I = 4ACE(sat) CWide Area of Safe OperationComplement to Type 2SB983Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSInverters, convertersControllers for DC motor, pulse motorSwitching power sup
8.6. Size:205K inchange semiconductor
2sd1344.pdf
isc Silicon NPN Power Transistor 2SD1344DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
8.7. Size:206K inchange semiconductor
2sd1342.pdf
isc Silicon NPN Power Transistor 2SD1342DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
8.8. Size:213K inchange semiconductor
2sd1348.pdf
isc Silicon NPN Power Transistor 2SD1348DESCRIPTIONHigh Collector Current-I = 4.0ACLow Saturation Voltage -: V = 0.5V(Max)@ I = 2A, I = 0.1ACE(sat) C BGood Linearity of hFEComplement to Type 2SB986Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power supplies, relay drivers, lamp drivers,electrical
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