Биполярный транзистор 2SD1340 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD1340
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 50 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
Макcимальный постоянный ток коллектора (Ic): 3.5 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: TO3
2SD1340 Datasheet (PDF)
2sd1340.pdf
isc Silicon NPN Power Transistor 2SD1340DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
2sd1348.pdf
Ordering number:1245CPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB986/2SD134850V/4A Switching ApplicationsApplications Package Dimensions Power supplies, relay drivers, lamp drivers, electricalunit:mmequipment.2009B[2SB986/2SD1348]Features Adoption of FBET and MBIT processes. Low saturation voltage. High current capacity and wide ASO.JEDEC :
2sd1347.pdf
Ordering number:1244CPNP/NPN Epitaxial Planar Silicon Transistors2SB985/2SD1347Large-Current Driving ApplicationsApplcations Package Dimensions Power supplies, relay drivers, lamp drivers, electricalunit:mmequipment.2006A[2SB985/2SD1347]Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO.EIAJ : SC-51 B :
2sd1345.pdf
isc Silicon NPN Power Transistor 2SD1345DESCRIPTIONHigh Switching TimeLow Collector Saturation Voltage: V = 0.4V(Max)@I = 4ACE(sat) CWide Area of Safe OperationComplement to Type 2SB983Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSInverters, convertersControllers for DC motor, pulse motorSwitching power sup
2sd1344.pdf
isc Silicon NPN Power Transistor 2SD1344DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
2sd1342.pdf
isc Silicon NPN Power Transistor 2SD1342DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
2sd1348.pdf
isc Silicon NPN Power Transistor 2SD1348DESCRIPTIONHigh Collector Current-I = 4.0ACLow Saturation Voltage -: V = 0.5V(Max)@ I = 2A, I = 0.1ACE(sat) C BGood Linearity of hFEComplement to Type 2SB986Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power supplies, relay drivers, lamp drivers,electrical
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: MJ2940
History: MJ2940
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050