2SD1397 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1397
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 1500 V
Tensión colector-emisor (Vce): 800 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 3.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Ganancia de corriente contínua (hfe): 8
Paquete / Cubierta: TO247
Búsqueda de reemplazo de transistor bipolar 2SD1397
2SD1397 Datasheet (PDF)
2sd1397.pdf
NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR2SD1397COLOR TV HORIZONTAL OUTPUTAPPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) SC-65 High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current
2sd1397.pdf
isc Silicon NPN Power Transistor 2SD1397DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
2sd1393.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1393DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 0.8AFE CLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose am
2sd1398.pdf
isc Silicon NPN Power Transistor 2SD1398DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedBuilt-in damper diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base V
2sd1399.pdf
isc Silicon NPN Power Transistor 2SD1399DESCRIPTIONHigh Breakdown Voltage: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in damper diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
2sd1394.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1394DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain: h = 2000(Min) @I = 1.5AFE CLow Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amp
2sd1390.pdf
isc Silicon NPN Power Transistor 2SD1390DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line-operated horizontal deflection outputapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150
2sd1395.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1395DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 2.5AFE CLow Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amp
2sd1391.pdf
isc Silicon NPN Power Transistor 2SD1391DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line-operated horizontal deflection outputapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150
2sd1396.pdf
isc Silicon NPN Power Transistor 2SD1396DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050