2SD1397. Аналоги и основные параметры
Наименование производителя: 2SD1397
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 80 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 3.5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 3 MHz
Статический коэффициент передачи тока (hFE): 8
Корпус транзистора: TO247
Аналоги (замена) для 2SD1397
- подборⓘ биполярного транзистора по параметрам
2SD1397 даташит
..1. Size:26K wingshing
2sd1397.pdf 
NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR 2SD1397 COLOR TV HORIZONTAL OUTPUT APPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) SC-65 High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current
..2. Size:214K inchange semiconductor
2sd1397.pdf 
isc Silicon NPN Power Transistor 2SD1397 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
8.5. Size:204K inchange semiconductor
2sd1393.pdf 
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1393 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 0.8A FE C Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose am
8.6. Size:215K inchange semiconductor
2sd1398.pdf 
isc Silicon NPN Power Transistor 2SD1398 DESCRIPTION High Breakdown Voltage High Switching Speed Built-in damper diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base V
8.7. Size:215K inchange semiconductor
2sd1399.pdf 
isc Silicon NPN Power Transistor 2SD1399 DESCRIPTION High Breakdown Voltage V = 1500V (Min) CBO High Switching Speed Built-in damper diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
8.8. Size:204K inchange semiconductor
2sd1394.pdf 
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1394 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = 1.5A FE C Low Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amp
8.9. Size:207K inchange semiconductor
2sd1390.pdf 
isc Silicon NPN Power Transistor 2SD1390 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150
8.10. Size:205K inchange semiconductor
2sd1395.pdf 
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1395 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 2.5A FE C Low Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amp
8.11. Size:212K inchange semiconductor
2sd1391.pdf 
isc Silicon NPN Power Transistor 2SD1391 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150
8.12. Size:214K inchange semiconductor
2sd1396.pdf 
isc Silicon NPN Power Transistor 2SD1396 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
Другие транзисторы: 2SD139, 2SD1390, 2SD1391, 2SD1392, 2SD1393, 2SD1394, 2SD1395, 2SD1396, 2SB817, 2SD1398, 2SD1399, 2SD14, 2SD1400, 2SD1401, 2SD1401BL, 2SD1401GR, 2SD1402
