2SD1409 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1409
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25 W
Tensión colector-base (Vcb): 600 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 35 pF
Ganancia de corriente contínua (hFE): 600
Encapsulados: TO220F
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2SD1409 datasheet
..1. Size:71K wingshing
2sd1409.pdf 
2SD1409 SILICON NPN DARLINGTON TRANSISTOR GENERAL DESCRIPTION Darington transistor are designed for use as general purpose amplifiers, switching and motor control applications. QUICK REFERENCE DATA TO-220F SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 600 V Collector-emitter voltage (open base) VCEO - 400 V Collector current (DC) I
..2. Size:105K jmnic
2sd1409.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1409 DESCRIPTION With TO-220F package High DC current gain Monolithic construction with built-in base-emitter shunt resistor APPLICATIONS Igniter applications High volitage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and sym
..3. Size:213K inchange semiconductor
2sd1409.pdf
isc Silicon NPN Darlington Power Transistor 2SD1409 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High DC Current Gain h = 600(Min) @ I = 2A, V = 2V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Igniter applications High voltage switching applications ABSOLUTE MAXIMUM RATINGS(T =25
0.2. Size:191K inchange semiconductor
2sd1409a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1409A DESCRIPTION High collector-emitter breakdown voltage- V = 400V(Min) (BR)CEO High DC current Gain h = 600(Min) @ I = 2A, V = 2V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Igniter applications High voltage swi
8.1. Size:105K toshiba
2sd1408.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.2. Size:131K toshiba
2sd1407a.pdf
2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit mm High breakdown voltage VCEO = 100 V Low collector saturation voltage VCE (sat) = 2.0 V (max) Complementary to 2SB1016A Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Col
8.5. Size:81K wingshing
2sd1403.pdf
Silicon Diffused Power Transistor 2SD1403 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim- arily for use in horizontal deflection circuites of colour television receivers MT-100 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value V = 0V BE V - 1500 V CES
8.6. Size:68K wingshing
2sd1402.pdf
NPN TRIPLE DIFFUSED 2SD1402 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS (No Damper Diode) SC-65 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collecto
8.8. Size:212K inchange semiconductor
2sd1400.pdf
isc Silicon NPN Power Transistor 2SD1400 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V C
8.9. Size:208K inchange semiconductor
2sd1404.pdf
isc Silicon NPN Power Transistor 2SD1404 DESCRIPTION High Collector Current Capability High Collector Power Dissipation Capability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS B/W TV horizontal deflection output applications. High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a
8.10. Size:217K inchange semiconductor
2sd1403.pdf
isc Silicon NPN Power Transistor 2SD1403 DESCRIPTION High Breakdown Voltage High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Col
8.11. Size:211K inchange semiconductor
2sd1408.pdf
isc Silicon NPN Power Transistor 2SD1408 DESCRIPTION Low Collector Saturation Voltage V = 1.5V(Max)@ I = 3A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Complement to Type 2SB1017 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T
8.12. Size:217K inchange semiconductor
2sd1402.pdf
isc Silicon NPN Power Transistor 2SD1402 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V C
8.13. Size:210K inchange semiconductor
2sd1407.pdf
isc Silicon NPN Power Transistor 2SD1407 DESCRIPTION Low Collector Saturation Voltage V = 2.0V(Max)@ I = 4A CE(sat) C Collector-Emitter Breakdown Voltage- V = 100V (Min) (BR)CEO Complement to Type 2SB1016 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T
8.14. Size:187K inchange semiconductor
2sd1405.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1405 DESCRIPTION High DC Current Gain h = 200(Min) @I = 0.5A FE C Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 1A CE(sat) C Collector Power Dissipation of 25W@ T =25 C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power
8.15. Size:216K inchange semiconductor
2sd1406.pdf
isc Silicon NPN Power Transistor 2SD1406 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@ I = 3A CE(sat) C Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO Complement to Type 2SB1015 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MA
Otros transistores... 2SD1407G, 2SD1407O, 2SD1407R, 2SD1407Y, 2SD1408, 2SD1408O, 2SD1408R, 2SD1408Y, BD136, 2SD1409O, 2SD1409R, 2SD1409Y, 2SD141, 2SD1410, 2SD1411, 2SD1411O, 2SD1411Y
