2SD1409 SILICON NPN DARLINGTON TRANSISTORGENERAL DESCRIPTIONDarington transistor are designed for use as general purpose amplifiers, switching and motor control applications.QUICK REFERENCE DATATO-220FSYMBOL PARAMETER CONDITIONS MIN MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 600 VCollector-emitter voltage (open base)VCEO - 400 VCollector current (DC)I

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1409 DESCRIPTION With TO-220F package High DC current gain Monolithic construction with built-in base-emitter shunt resistor APPLICATIONS Igniter applications High volitage switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and sym

isc Silicon NPN Darlington Power Transistor 2SD1409DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh DC Current Gain: h = 600(Min) @ I = 2A, V = 2VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIgniter applicationsHigh voltage switching applicationsABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Darlington Power Transistor 2SD1409ADESCRIPTIONHigh collector-emitter breakdown voltage-: V = 400V(Min)(BR)CEOHigh DC current Gain: h = 600(Min) @ I = 2A, V = 2VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIgniter applicationsHigh voltage swi

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 100 V Low collector saturation voltage: VCE (sat) = 2.0 V (max) Complementary to 2SB1016A Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 100 VCol

Silicon Diffused Power Transistor2SD1403GENERAL DESCRIPTIONHighvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim-arily for use in horizontal deflection circuites of colour television receiversMT-100QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value V = 0VBEV - 1500 VCES

NPN TRIPLE DIFFUSED2SD1402 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS (No Damper Diode) SC-65 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collecto

2SD1407 PNP EPITAXIAL SILICON TRANSISTORPOWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 Complement to 2SB1016ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 25 W

isc Silicon NPN Power Transistor 2SD1400DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV C

isc Silicon NPN Power Transistor 2SD1404DESCRIPTIONHigh Collector Current CapabilityHigh Collector Power Dissipation CapabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSB/W TV horizontal deflection output applications.High voltage switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

isc Silicon NPN Power Transistor 2SD1403DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Col

isc Silicon NPN Power Transistor 2SD1408DESCRIPTIONLow Collector Saturation Voltage: V = 1.5V(Max)@ I = 3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOComplement to Type 2SB1017Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T

isc Silicon NPN Power Transistor 2SD1402DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV C

isc Silicon NPN Power Transistor 2SD1407DESCRIPTIONLow Collector Saturation Voltage: V = 2.0V(Max)@ I = 4ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 100V (Min)(BR)CEOComplement to Type 2SB1016Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1405DESCRIPTIONHigh DC Current Gain: h = 200(Min) @I = 0.5AFE CLow Collector Saturation Voltage: V = 1.0V(Max.)@ I = 1ACE(sat) CCollector Power Dissipation of 25W@ T =25CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power

isc Silicon NPN Power Transistor 2SD1406DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@ I = 3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOComplement to Type 2SB1015Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MA