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2SD1409R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD1409R
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 25 W
   Tensión colector-base (Vcb): 600 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 35 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: TO220F

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2SD1409R Datasheet (PDF)

 7.1. Size:212K  toshiba
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2SD1409R
2SD1409R

 7.2. Size:71K  wingshing
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2SD1409R

2SD1409 SILICON NPN DARLINGTON TRANSISTORGENERAL DESCRIPTIONDarington transistor are designed for use as general purpose amplifiers, switching and motor control applications.QUICK REFERENCE DATATO-220FSYMBOL PARAMETER CONDITIONS MIN MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 600 VCollector-emitter voltage (open base)VCEO - 400 VCollector current (DC)I

 7.3. Size:105K  jmnic
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2SD1409R
2SD1409R

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1409 DESCRIPTION With TO-220F package High DC current gain Monolithic construction with built-in base-emitter shunt resistor APPLICATIONS Igniter applications High volitage switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and sym

 7.4. Size:191K  inchange semiconductor
2sd1409a.pdf

2SD1409R
2SD1409R

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Darlington Power Transistor 2SD1409ADESCRIPTIONHigh collector-emitter breakdown voltage-: V = 400V(Min)(BR)CEOHigh DC current Gain: h = 600(Min) @ I = 2A, V = 2VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIgniter applicationsHigh voltage swi

 7.5. Size:213K  inchange semiconductor
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2SD1409R
2SD1409R

isc Silicon NPN Darlington Power Transistor 2SD1409DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh DC Current Gain: h = 600(Min) @ I = 2A, V = 2VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIgniter applicationsHigh voltage switching applicationsABSOLUTE MAXIMUM RATINGS(T =25

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

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